User Manual

VS-UFL80FA60
www.vishay.com
Vishay Semiconductors
Revision: 26-Oct-11
2
Document Number: 93643
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 100 μA 600 - -
V
Forward voltage V
FM
I
F
= 30 A - 1.1 1.43
I
F
= 60 A - 1.27 1.49
I
F
= 30 A
T
J
= 125 °C
-1.01.23
I
F
= 60 A - 1.17 1.35
Reverse leakage current I
RM
V
R
= V
R
rated - 0.1 50 μA
T
J
= 175 °C, V
R
= V
R
rated - 0.2 1.0 mA
Junction capacitance C
T
V
R
= 600 V - 30 - pF
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
T
J
= 25 °C
I
F
= 1 A;
dI
F
/dt = 200 A/μs;
V
R
= 30 V
-41-
ns
T
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-115-
T
J
= 125 °C - 200 -
Peak recovery current I
RRM
T
J
= 25 °C - 11 -
A
T
J
= 125 °C - 20 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 600 -
nC
T
J
= 125 °C - 1900 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
R
thJC
- - 1.02
°C/WJunction to case, both leg conducting - - 0.51
Case to heatsink R
thCS
Flat, greased surface - 0.10 -
Weight -30- g
Mounting torque -1.3-Nm
Case style SOT-227