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VS-GT100TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A FEATURES • Low VCE(sat) trench IGBT technology • 10 μs short circuit capability • VCE(sat) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology INT-A-PAK • Material categorization: For definitions of compliance please see www.vishay.
VS-GT100TP120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.90 2.35 VGE = 15 V, IC = 100 A, TJ = 175 °C - 2.50 - UNITS Collector to emitter saturation voltage VCE(sat) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 5.0 mA, TJ = 25 °C 5.0 5.9 7.
VS-GT100TP120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction temperature range Storage temperature range TEST CONDITIONS MIN. TYP. MAX. UNITS TJ - - 175 °C TStg - 40 - 125 °C - - 0.23 - - 0.36 - 0.05 - IGBT Junction to case per ½ module RthJC Diode Case to sink (Conductive grease applied) RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.
VS-GT100TP120N www.vishay.com Vishay Semiconductors 250 Module IC (A) 200 150 100 RG = 5.6 Ω VGE = ± 15 V TJ = 125 °C 50 0 0 350 700 1050 1400 VCE (V) Fig. 5 - RBSOA 1 ZthJC (K/W) IGBT 0.1 0.01 0.001 0.001 0.01 0.1 10 1 t (s) Fig. 6 - IGBT Transient Thermal Impedance 200 8 175 7 150 6 IF (A) E (mJ) 25 °C 125 125 °C 100 VCC = 600 V RG = 5.6 Ω VGE = - 15 V TJ = 125 °C 5 EREC 4 75 3 50 2 25 1 0 0 0 0.5 1 1.5 2 2.5 VF (V) Fig.
VS-GT100TP120N www.vishay.com Vishay Semiconductors 6 5 EREC E (mJ) 4 3 VCC = 600 V IF = 100 A VGE = - 15 V TJ = 125 °C 2 1 0 0 10 20 30 40 50 60 RG (Ω) Fig. 9 - Diode Switching Loss vs. RG 1 ZthJC (K/W) Diode 0.1 0.01 0.001 0.01 0.1 1 10 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 Revision: 06-Aug-12 Document Number: 93800 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.
VS-GT100TP120N www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 40 17 3 - M5.0 23 34 6 7 17 12.5 5 4 4.5 23 3 2 1 4.5 80 2Ø 94.1 6.4 13 22.2 13.64 7.2 13.64 18.98 30.58 23.5 6.92 18.97 31.4 Revision: 06-Aug-12 Document Number: 93800 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
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