User guide

VS-GT100TP120N
www.vishay.com
Vishay Semiconductors
Revision: 06-Aug-12
1
Document Number: 93800
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Half Bridge IGBT Power Module, 1200 V, 100 A
FEATURES
•Low V
CE(sat)
trench IGBT technology
• 10 μs short circuit capability
•V
CE(sat)
with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Inverter for motor drive
• AC and DC servo drive amplifier
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C 100 A
V
CE(on)
(typical)
at I
C
= 100 A, 25 °C
1.90 V
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200
V
Gate to emitter voltage V
GES
± 30
Collector current I
C
T
C
= 25 °C 180
A
T
C
= 80 °C 100
Pulsed collector current I
CM
(1)
t
p
= 1 ms 200
Diode continuous forward current I
F
T
C
= 80 °C 100
Diode maximum forward current I
FM
(1)
t
p
= 1 ms 200
Maximum power dissipation P
D
T
J
= 175 °C 652 W
Short circuit withstand time t
SC
T
C
= 125 °C 10 μs
RMS isolation voltage V
ISOL
f = 50 Hz, t = 1 min 4000 V