User guide

VS-GT100TP120N
www.vishay.com
Vishay Semiconductors
Revision: 06-Aug-12
3
Document Number: 93800
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
G
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction temperature range T
J
- - 175 °C
Storage temperature range T
Stg
- 40 - 125 °C
Junction to case
per ½ module
IGBT
R
thJC
- - 0.23
K/WDiode - - 0.36
Case to sink (Conductive grease applied) R
thCS
-0.05-
Mounting torque
Power terminal screw: M5 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight Weight of module - 150 - g
0
25
50
75
100
125
150
175
200
0 0.5 1 1.5 2 2.5 3 3.5 4
I
C
(A)
V
CE
(V)
25 °C
175 °C
V
GE
= 15 V
0
25
50
75
100
125
150
175
200
456789101112
175 °C
25 °C
V
CE
= 50 V
V
GE
(V)
I
C
(A)
0
5
10
15
20
25
30
0 50 100 150 200
E
ON
E
OFF
V
CC = 600 V
R
G
= 5.6 Ω
V
GE
= ± 15 V
T
J
= 125 °C
I
C
(A)
E (mJ)
E (mJ)
R
g
(Ω)
0
5
10
15
20
25
30
35
0 102030405060
E
OFF
E
ON
V
CC = 600 V
I
C
= 100 A
V
GE
= ± 15 V
T
J
= 125 °C