Manual

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, [e-mail], [e-mail] Revision: 17-May-10
VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 27 A
Fig. 10 - On-State Voltage Drop Characteristics
Fig. 11 - Thermal Impedance Z
thJC
Characteristics
Fig. 12 - Gate Characteristics
Instantaneous on-state voltage (V)
Instantaneous on-state current (A)
0.0 1.0 2.0 3.0 4.0 5.0 6.0
1
10
100
1000
Tj = 25°C
Tj = 125°C
Per leg
Square wave pulse duration (s)
Transient thermal impedance Z
thJC
(°C/W)
0.001 0.01 0.1 1 10
0.01
0.1
1
10
Steady state value
RthJC = 0.76 °C/W
(DC operation)
Per leg
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Rectangular g ate p ulse
(4)
(3) (2) (1)
(1) PGM = 100 W, t p = 500 µs
(2) PGM = 50 W, t p = 1 ms
(3) PGM = 20 W, t p = 25 ms
(4) PGM = 10 W, t p = 5 ms
TJ = - 4 0 ° C
TJ = 2 5 ° C
TJ = 12 5 ° C
a )Recommended load line for
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
rated di/ d t: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
IRK.26.. Se ries
Instantaneous gate voltage (V)
Instantaneous gate current (A)
VSK.