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VSKS500-08PbF Vishay High Power Products MAP Block Power Module Single Thyristor, 500 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances MAP Block Power • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Battery chargers PRODUCT SUMMARY IT(AV) 500 A • Welders • Power converters • Alternators MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERIS
VSKS500-08PbF Vishay High Power Products MAP Block Power Module Single Thyristor, 500 A ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction half sine wave As AC switch t = 10 ms Maximum peak, one-cycle on-state, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I 2t t = 8.3 ms t = 10 ms t = 8.
VSKS500-08PbF MAP Block Power Module Vishay High Power Products Single Thyristor, 500 A TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum required DC gate voltage to trigger VGT Maximum required DC gate current to trigger IGT Maximum holding current IH Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM DC gate voltage not to trigger VGD DC gate current not to trigger IGD
VSKS500-08PbF Vishay High Power Products MAP Block Power Module Single Thyristor, 500 A 600 120 Maximum Average On-State Power Loss (W) Maximum Allowable Case Temperature (°C) 140 Ø Conduction angle 100 80 60° 60 180° 30° 90° 40 120° 20 500 400 300 Ø Conduction period 100 Per leg, TJ = 125 °C 0 0 100 200 300 400 500 0 600 Average On-State Current (A) 93160_01 100 200 300 400 500 Average On-State Current (A) 93160_04 Fig. 1 - Current Rating Characteristics Fig.
VSKS500-08PbF Instantaneous On-State Current (A) MAP Block Power Module Vishay High Power Products Single Thyristor, 500 A 10 000 1000 TJ = 130 °C 100 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous On-State Voltage (V) 93160_07 Fig. 7 - On-State Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (K/W) 0.1 0.01 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) 93160_08 Fig.
VSKS500-08PbF Vishay High Power Products MAP Block Power Module Single Thyristor, 500 A CIRCUIT CONFIGURATION 2 (+) 1 2 3 (-) 7 6 4 5 K1 G1 K1 G1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 www.vishay.com/doc?95379 For technical questions, contact: indmodules@vishay.
Outline Dimensions Vishay Semiconductors Thyristor MAP Block DIMENSIONS in millimeters 3.0 Fast-on tab 2.8 x 0.8 20 + 1.5 52 - 0.0 33 ± 0.5 9.5 ± 0.5 102.8 ± 0.3 Ø 6. 3 36.8 ± 0.15 44.7 ± 0.15 M1 K A 25 7 6 K G 4 38 ± 0.3 5 5 51.5 ± 0.3 0 80 ± 0.3 93.5 ± 0.3 Notes • Dimensions are nominal • Full engineering drawings are available on request Document Number: 95379 Revision: 02-Dec-09 For technical questions, contact: indmodules@vishay.com www.vishay.
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