User Manual

www.vishay.com For technical questions, contact: [e-mail] Document Number: 93160
2 Revision: 14-Dec-09
VSKS500-08PbF
Vishay High Power Products
MAP Block Power Module
Single Thyristor, 500 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction half sine wave
500 A
76 °C
Maximum RMS on-state current I
T(RMS)
As AC switch 785
A
Maximum peak, one-cycle
on-state, non-repetitive
surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sine half wave,
initial T
J
=
T
J
maximum
16 646
t = 8.3 ms 17 430
t = 10 ms
100 % V
RRM
reapplied
14 000
t = 8.3 ms 14 658
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
1385
kA
2
s
t = 8.3 ms 1265
t = 10 ms
100 % V
RRM
reapplied
894
t = 8.3 ms 894
Maximum I
2
√t for fusing I
2
√t t = 0.1 ms to 10 ms, no voltage reapplied 1385 kA
2
√s
Low level value of threshold voltage V
T(TO)1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
maximum 0.6839
V
High level value of threshold voltage V
T(TO)2
(I > π x I
T(AV)
), T
J
maximum 0.7598
Low level value on-state
slope resistance
r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
maximum 0.393
mΩ
High level value on-state
slope resistance
r
t2
(I > π x I
T(AV)
), T
J
maximum 0.389
Maximum on-state voltage drop V
TM
T
J
= 25 °C, 500 A I
pk
1.1 V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical delay time t
d
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C, I
t
= 400 A
1.3
μs
Typical turn-off time t
q
I
TM
= 750 A, T
J
= T
J
maximum, dI/dt = 60 A/μs, V
R
= 50 V
dV/dt = 20 V/μs, Gate 0 V 100 Ω, t
p
= 500 μs
200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt T
J
= T
J
maximum linear to 67 % rated V
DRM
500 V/μs
Maximum peak reverse and off-state
leakage current
I
DRM
,
I
RRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied 80 mA
RMS insulation voltage V
INS
50 Hz, circuit to base, all terminal shorted, t = 1 s 3000 V