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VSKT320PbF Series www.vishay.com Vishay Semiconductors Thyristor/Thyristor (MAGN-A-PAK Power Modules), 320 A FEATURES • High voltage • Electrically isolated base plate • 3600 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL approved file E78996 MAGN-A-PAK • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.
VSKT320PbF Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle on-state non-repetitive, surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave 710 No voltage reapplied 100 % VRRM reapplied 7570 t = 10 ms No voltage reapplied t = 8.
VSKT320PbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES PGM tp 5 ms, TJ = TJ maximum 10.0 Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0 Maximum peak gate current + IGM tp 5 ms, TJ = TJ maximum 3.0 Maximum peak negative gate voltage - VGT tp 5 ms, TJ = TJ maximum 5.0 Maximum peak gate power VGT Maximum required DC gate current to trigger IGT W A 4.
VSKT320PbF Series www.vishay.com Vishay Semiconductors Maximum Allowable Case Temperature (°C) RthJC(DC) = 0.125 K/W 120 110 Ø Conduction angle 100 90 30° 80 60° 90° 120° 70 180° Maximum Average On-State Power Loss (W) 130 60 0 50 100 150 200 250 300 350 Average On-State Current (A) 94085_01 650 600 550 500 450 400 350 300 250 200 150 100 50 0 200 300 400 500 Average On-State Current (A) Fig. 4 - On-State Power Loss Characteristics 8000 RthJC(DC) = 0.
VSKT320PbF Series Instantaneous On-State Current (A) www.vishay.com Vishay Semiconductors 10 000 TJ = 130 °C 1000 TJ = 25 °C Per junction 100 0.5 1.5 2.5 3.5 4.5 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 94085_07 ZthJC - Transient Thermal Impedance (°C/W) 1 Steady state value RthJC = 0.125 K/W (DC operation) 0.1 0.01 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig.
VSKT320PbF Series www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION ~ ~ + + - K1 G1 G2 K2 LINKS TO RELATED DOCUMENTS Dimensions Revision: 05-Jul-12 www.vishay.com/doc?95086 Document Number: 94085 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.
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