Instruction Manual

VSKT320PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 05-Jul-12
3
Document Number: 94085
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Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
t
p
 5 ms, T
J
= T
J
maximum 10.0
W
Maximum average gate power P
G(AV)
f = 50 Hz, T
J
= T
J
maximum 2.0
Maximum peak gate current + I
GM
t
p
 5 ms, T
J
= T
J
maximum 3.0 A
Maximum peak negative gate voltage - V
GT
t
p
 5 ms, T
J
= T
J
maximum 5.0
V
Maximum required DC gate voltage to trigger V
GT
T
J
= - 40 °C
Anode supply = 12 V,
resistive load; Ra = 1 
4.0
T
J
= 25 °C 3.0
T
J
= T
J
maximum 2.0
Maximum required DC gate current to trigger I
GT
T
J
= - 40 °C
Anode supply = 12 V,
resistive load; Ra = 1 
350
mAT
J
= 25 °C 200
T
J
= T
J
maximum 100
Maximum gate voltage that will not trigger V
GD
T
J
= T
J
maximum, rated V
DRM
applied 0.25 V
Maximum gate current that willnot trigger I
GD
T
J
= T
J
maximum, rated V
DRM
applied 10.0 mA
Maximum rate of rise of turned-on current dI/dt
T
J
= T
J
maximum, I
TM
= 400 A, 
rated V
DRM
applied
500 A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction operating and storage 
temperature range
T
J
, T
Stg
- 40 to 130 °C
Maximum thermal resistance, 
junction to case per junction
R
thJC
DC operation 0.125
K/W
Typical thermal resistance,
case to heatsink per module
R
thCS
Mounting surface flat, smooth and greased 0.02
Mounting torque ± 10 %
MAP to heatsink
A mounting compound is recommended
and the torque should be rechecked after
a period of about 3 hours to allow for the
spread of the compound.
4 to 6 Nm
busbar to MAP
Approximate weight
500 g
17.8 oz.
Case style MAGN-A-PAK
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM RECTANGULAR CONDUCTION AT T
J
MAXIMUM
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSKT320- 0.009 0.010 0.013 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W