Hardware manual

57
FUJITSU SEMICONDUCTOR CONFIDENTIAL
MB96630 Series
DS704-00012-1v0-E
7. Flash Memory Write/Erase Characteristics
(V
CC
= AV
CC
= 2.7V to 5.5V, V
SS
= AV
SS
= 0V, T
A
= - 40°C to + 125°C)
Parameter Conditions
Value
Unit Remarks
Min
Typ
Max
Sector erase time
Large Sector T
A ≤ + 105°C - 1.6 7.5 s
Includes write time
prior to internal erase.
Small Sector - - 0.4 2.1 s
Security Sector - - 0.31 1.65 s
Word (16-bit)
write time
Large Sector T
A ≤ + 105°C - 25 400
µs
Not including
system-level overhead
time.
Small Sector - - 25 400
µs
Chip erase time TA ≤ + 105°C - 11.51 55.05 s
Includes write time
prior to internal erase.
Note: While the Flash memory is written or erased, shutdown of the external power (V
CC
) is prohibited. In the
application system where the external power (V
CC
) might be shut down while writing or erasing, be sure
to turn the power off by using a low voltage detection function.
To put it concrete, change the external power in the range of change ration of power supply voltage
(-0.004V/µs to +0.004V/µs) after the external power falls below the detection voltage (V
DLX
)
*1
.
Write/Erase cycles and data hold time
Write/Erase cycles
(cycle)
Data hold time
(year)
1,000
20
*2
10,000
10
*2
100,000
5
*2
*1: See "6. Low Voltage Detection Function Characteristics".
*2: This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at + 85°C).