Hardware manual

68
FUJITSU SEMICONDUCTOR CONFIDENTIAL
MB96630 Series
DS704-00012-1v0-E
Page
Section
Change Results
51
5. A/D Converter
(1) Electrical Characteristics for
the A/D Converter
Added “Analog impedance”
Added “Variation between channels
Added the annotation
52
5. A/D Converter
(2) Accuracy and Setting of the
A/D Converter Sampling Time
Deleted the unit “[Min]” from approximation formula of
Sampling time
53
5. A/D Converter
(3) Definition of A/D Converter
Terms
Changed the Description and the figure
“Linearity” → “Nonlinearity”
“Differential linearity error”
Differential nonlinearity error”
Changed the Description
Linearity error:
Deviation of the line between the zero-transition point
(0b0000000000←→0b0000000001) and the full-scale
transition point (0b11111111100b1111111111) from the
actual conversion characteristics.
Nonlinearity error:
Deviation of the actual conversion characteristics from a
straight line that connects the zero transition point
(0b0000000000 ←→ 0b0000000001) to the full-scale
transition point (0b11111111100b1111111111).
Added the Description
Zero transition voltage
Full scale transition voltage
55
6. Low Voltage Detection
Function Characteristics
Added the Value of Power supply voltage change rate”
Max: +0.004 V/µs
Added “Hysteresis width” (V
HYS
)
Added “Stabilization time” (T
LVDSTAB
)
Added “Detection delay time” (t
d
)
Deleted the Remarks
Added the annotation *1, *2
56
Added the figure for “Hysteresis width”
Added the figure for “Stabilization time”
57
7. Flash Memory Write/Erase
Characteristics
Changed the Value of Sector erase time
Added Security Sector” to Sector erase time
Changed the Parameter
“Half word (16 bit) write time
“Word (16-bit) write time
Changed the Value of “Chip erase time”
Changed the Remarks of “Sector erase time
Excludes write time prior to internal erase
Includes write time prior to internal erase
Added the Note and annotation *1
Deleted(targeted value)from title “ Write/Erase cycles and
data hold time”
58 to 60
EXAMPLE
CHARACTERISTICS
Added a section