User`s guide

EE Pro for TI-89, 92 Plus
Reference - Semiconductor data
9
III-V, II-VI
Compounds
Input Field:
Compound:
EG:
(Energy Gap)
µ
n:
(Electron mobility)
µ
p:
(Hole mobility)
mn:
(Electron Effective mass)
mp:
(Hole Effective mass)
a:
(Lattice constant)
MP:
(Melting point)
ε
r:
(Dielectric constant)
ρ
:
(Density)
GaP
!
Press
¸
to display pull
down menu listing the III-V and II-VI
semi-conducting compounds. They
are:
1:GaP
2:GaSb
3:InAs
4:InP
5:InSb
6:CdS
7:CdSe
8:CdTe
œ
9:ZnS
A:ZnSe
B:ZnTe
To select a compound, use the
D
key to move to highlight bar to the
item and press
¸
(or enter the
item number).
eV
m
2
/(V*s)
m
2
/(V*s)
unitless
unitless
nm
°
C
unitless
g/cm
3
Si Donor Levels
Output Field:
Silicon Donor levels are displayed
relative to the conduction band.
The donor list includes the
following:
Li:
Sb:
P:
As:
Bi:
Te:
Ti:
C:
Se:
Se:
Cr:
Ta:
Ta:
Cs:
Ba:
S:
Mn:
Mn(VB):
All values are displayed in electron
volts
(eV)
relative to the conduction
band. In some cases there is a
(VB)
designation next to the
element. In these cases, the
location of the donor level is
referenced
relative to the valence
band.
For example, the donor level for
Te
is displayed as 0.14_eV indicating
that the donor level is 0.14 eV
below the conduction band.
On the
other hand
Gold
has
(VB)
appended. Thus the value 0.29_eV
displayed reflects that the donor
level of Gold (i.e., Au) is 0.29 eV
above the valence band.
Some elements have multiple
energy levels and therefore appear
more than once.