Data Sheet

1N4148.1N4448
Vishay Semiconductors
1 (4)
Rev. 4, 12-Feb-01
www.vishay.com
Document Number 85521
Fast Switching Diodes
Features
Silicon Epitaxial Planar Diodes
Electrically equivalent diodes:
1N4148 – 1N914
1N4448 – 1N914B
Applications
Extreme fast switches
94 9367
Order Instruction
Type Type Differentiation Ordering Code Remarks
1N4148
V = 100 V V @I 10mA=1V
1N4148–TAP Ammopack
1N4148
V
RRM
=
100
V
,
V
F
@I
F
10mA
=
1
V
1N4148–TR Tape and Reel
1N4448
V
RRM
= 100 V V
F
@I
F
100mA=1V
1N4448–TAP Ammopack
1N4448
V
RRM
=
100
V
,
V
F
@I
F
100mA
=
1
V
1N4448–TR Tape and Reel
Absolute Maximum Ratings
T
j
= 25 C
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
RRM
100 V
Reverse voltage V
R
75 V
Peak forward surge current t
p
=1 s I
FSM
2 A
Repetitive peak forward current I
FRM
500 mA
Forward current I
F
300 mA
Average forward current V
R
=0 I
FAV
150 mA
Power dissi
p
ation
l=4 mm, T
L
=45 C P
V
440 mW
Power
dissipation
l=4 mm, T
L
25 C P
V
500 mW
Junction temperature T
j
200 C
Storage temperature range T
stg
–65...+200 C
Maximum Thermal Resistance
T
j
= 25 C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4 mm, T
L
=constant R
thJA
350 K/W