Data Sheet

1N4148.1N4448
Vishay Semiconductors
2 (4) Rev. 4, 12-Feb-01
www.vishay.com Document Number 85521
Electrical Characteristics
T
j
= 25 C
Parameter Test Conditions Type Symbol Min Typ Max Unit
I
F
=5mA 1N4448 V
F
0.62 0.72 V
Forward voltage I
F
=10mA 1N4148 V
F
1 V
g
I
F
=100mA 1N4448 V
F
1 V
V
R
=20 V I
R
25 nA
Reverse current V
R
=20 V, T
j
=150 C I
R
50 A
V
R
=75 V I
R
5 A
Breakdown voltage
I
R
=100 A, t
p
/T=0.01,
t
p
=0.3ms
V
(BR)
100 V
Diode capacitance V
R
=0, f=1MHz, V
HF
=50mV C
D
4 pF
Rectification efficiency V
HF
=2V, f=100MHz
r
45 %
I
F
=I
R
=10mA, i
R
=1mA t
rr
8 ns
Reverse recovery time
I
F
=10mA, V
R
=6V, i
R
=0.1xI
R
,
R
L
=100
t
rr
4 ns
Characteristics (T
j
= 25 C unless otherwise specified)
–300 306090
0
0.2
0.4
0.6
0.8
1.2
V – Forward Voltage ( V )
F
T
j
– Junction Temperature ( °C )
120
94 9169
1.0
I
F
=100mA
10mA
1mA
0.1mA
Figure 1. Forward Voltage vs. Junction Temperature
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I – Forward Current ( mA )
F
V
F
– Forward Voltage ( V )
2.0
94 9170
1 N 4148
Scattering Limit
T
j
=25°C
Figure 2. Forward Current vs. Forward Voltage