Datasheet

2N2221A
2N2222A
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2221A and
2N2222A are silicon NPN epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (T
A
=25°C) SYMBOL UNITS
Collector-Base Voltage V
CBO
75 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
6.0 V
Continuous Collector Current I
C
800 mA
Power Dissipation P
D
500 mW
Power Dissipation (T
C
=25°C) P
D
1.8 W
Operating and Storage Junction Temperature T
J
, T
stg
-65 to +200 °C
Thermal Resistance Θ
JA
350 °C/W
Thermal Resistance Θ
JC
97 °C/W
ELECTRICAL CHARACTERISTICS: (T
A
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
V
CB
=60V 10 nA
I
CBO
V
CB
=60V, T
A
=150°C 10 μA
I
CEV
V
CE
=60V, V
EB
=3.0V 10 nA
I
EBO
V
EB
=3.0V 10 nA
BV
CBO
I
C
=10μA 75 V
BV
CEO
I
C
=10mA 40 V
BV
EBO
I
E
=10μA 6.0 V
V
CE(SAT)
I
C
=150mA, I
B
=15mA 0.3 V
V
CE(SAT)
I
C
=500mA, I
B
=50mA 1.0 V
V
BE(SAT)
I
C
=150mA, I
B
=15mA 0.6 1.2 V
V
BE(SAT)
I
C
=500mA, I
B
=50mA 2.0 V
2N2221A 2N2222A
MIN MAX MIN MAX
h
FE
V
CE
=10V, I
C
=0.1mA 20 - 35 -
h
FE
V
CE
=10V, I
C
=1.0mA 25 - 50 -
h
FE
V
CE
=10V, I
C
=10mA 35 - 75 -
h
FE
V
CE
=10V, I
C
=10mA, T
A
=-55°C 15 - 35 -
h
FE
V
CE
=10V, I
C
=150mA 40 120 100 300
h
FE
V
CE
=1.0V, I
C
=150mA 20 - 50 -
h
FE
V
CE
=10V, I
C
=500mA 25 - 40 -
TO-18 CASE
R5 (5-December 2013)
www.centralsemi.com