User's Manual

Chapter 11 – SocketModem EDGE (MTSMC-E)
Multi-Tech Systems, Inc. Universal Socket Hardware Guide for Developers (S000342D) 140
SIM Interface Electrical Characteristics
Parameter Conditions Min Typ Max Unit
SIMDATA V
IH
I
IH
= +/- 20µA
0.7xSIMVCC V
SIMDATA V
IL
I
IL
= 1 mA 0.3xSIMVCC V
SIMRST,
SIMDATA
SIMCLK V
OH
Source current
= 20µA
SIMVCC – 0.1V V
SIMRST,
SIMDATA
SIMCLK V
OL
Sink current
= -200µA
0.1
SIMVCC Output
Voltage
I
SIMVCC
<= 6mA 2.70 2.80 2.85 V
SIMCLK
Rise/Fall Time
Loaded with 30pF 50 ns
SIMRST,
SIMDATA
Rise/Fall Time
Loaded with 30pF 1
µs
SIMCLK Frequency
Loaded with 30pF 3.25 MHz
Other Characteristics
Radio Characteristics
GSM 850 EGSM 900 GSM 1800 GSM 1900
Frequency RX
869 to 894 MHz 925 to 960 MHz 1805 to 1880 MHz 1930 to 1990 MHz
Frequency TX
824 to 849 MHz 880 to 915 MHz 1710 to 1785 MHz 1850 to 1910 MHz
RF Power Stand
2W at 12.5%
duty cycle
2W at 12.5% duty
cycle
1W at 12.5% duty
cycle
1W at 12.5% duty
cycle
Impedance 50 ohms
VSWR <2
Typical Radiated Gain 0 dBi on azimuth plane
Receiver Features
EGSM Sensitivity : < -104 dBm
GSM 1800/GSM 1900 Sensitivity : < -102 dBm
Selectivity @ 200 kHz : > +9 dBc
Selectivity @ 400 kHz : > +41 dBc
Dynamic range : 62 dB
Intermodulation : > -43 dBm
Co-channel rejection : + 9 dBc
Transmitter Features
Maximum output power (EGSM) : 33 dBm +/- 2 dB
Maximum output power (DCS/PCS) : 30 dBm +/- 2 dB
Minimum output power (EGSM): 5 dBm +/- 5 dB
Minimum output power (DCS/PCS): 0 dBm +/- 5 dB
H2 level : < -30 dBm
H3 level : < -30 dBm
Noise in 925 - 935 MHz : < -67 dBm
Noise in 935 - 960 MHz : < -79 dBm
Noise in 1805 - 1880 MHz : < -71 dBm
Phase error at peak power : < 5 ° RMS
Frequency error : +/- 0.1 ppm max
Speaker Output
Differential speaker output capable of driving 8 ohm load. 1.0945 Vpp (differential) typical.
Microphone Input
Balanced microphone input: full scale input 1.1 Vpp.