Product Info

Cinterion
®
TX62-W(-B/-C)/TX82-W Hardware Interface Description
2.1 Application Interface
69
t TX62-W_TX62-W-x_TX82-W_HID_v01.000 2021-05-19
Confidential / Preliminary
Page 24 of 154
2.1.2 Signal Properties
Table 3: Signal properties
Function Signal name IO Signal form and level Comment
Power
supply
BATT+
BB
I Voltage ranges:
TX82-W only:
LTE and GSM:
V
I
min = 3.1 V...V
I
max = 4.6V
LTE with GSM deactivated
V
I
min = 2.8 V...V
I
max = 4.6V
TX62 only:
LTE:
V
I
min = 2.55 V...V
I
max = 4.8V
TX62-W-B and TX62-W-C only:
LTE:
V
I
min = 2.5 V...V
I
max = 4.5V
TX62-W, TX62-W-B, TX62-W-C and
TX82-W:
V
I
norm = 3.8V
I
Power Down
= 14µA
Lines of BATT+ and GND
must be connected in
parallel for supply pur-
poses because higher
peak currents may occur.
BATT+
BB
at solder pads
needs an additional low
ESR 47
µF capacitor (e.g,
X7R MLCC, taking
DCbias into account).
BATT+
RF
is only required
if GSM is used. In this
case BATT+
RF
at solder
pads needs an additional
low ESR 150
µF capacitor
(e.g, X7R MLCC, taking
DCbias into account).
A minimum ESR value
<70m is recommended.
Minimum voltage must
not fall below 3.1V
(LTE+GSM, TX82-W) or
2.55V (LTE w/o GSM,
TX62-W) or 2.5V (LTE w/
o GSM, TX62-W-B,
TX62-W-C) including
GSM drops, ripple,
spikes. Else the module
may perform an uncon-
trolled shutdown.
If using the extended volt-
age range, i.e., down to
2.5V or up to 4.8V, the
module remains fully
functional and safe while
possibly no longer being
fully compliant with 3GPP
or other wireless stan-
dards. Please note that
the module is in this case
switched on at a voltage
of >2.65V.
Please note that if both
voltage domains and
power supply lines are
referred to - i.e., BATT+
BB
and BATT+
RF
- BATT+ is
used throughout the doc-
ument.
BATT+
RF
GSM activated
IV
I
max = 4.6V
V
I
norm = 3.8V
V
I
min = 3.1 V during Tx burst on board
Imax
1.99A, during Tx burst (GSM)
__|¯¯|____|¯¯|__
N Tx = n * 577µs peak current every
4.616ms