Specifications

Cinterion
®
TX62-W/TX82-W Hardware Interface Description
3.4 Power Supply
120
t TX62-W_TX62-W-x_TX82-W-x_HID_v01.200d 2022-09-08
Public / Preliminary
Page 115 of 170
3.4.2 Minimizing Power Losses
For TX82-W only: When designing the power supply for your application (and with GSM en-
abled) please pay specific attention to power losses. Ensure that the input voltage V
BATT+
never
drops below 3.1V on the TX82-W board, not even in a GSM transmit burst where current con-
sumption can rise (for peak values see the power supply ratings listed in Section 3.4.1).
Figure 50: Power supply limits during transmit burst
3.4.3 Measuring the Supply Voltage (V
BATT+
)
To measure the supply voltage V
BATT+
it is possible to define two reference points GND and
BATT+. GND and BATT+ should be a test pad on the external application the module is mount-
ed on. The eternal GND reference point has to be connected to and positioned close to the
SMT application interface’s GND pad F17 and the external BATT+ reference point has to be
connected to and positioned close to the SMT application interface’s BATT+ pads G15 and
G16 (BATT+
RF
) or H15 and H16 (BATT+
BB
) as shown in Figure 51.
Figure 51: Position of reference points BATT+ and GND
Min. 3.1V
BATT+
Transmit
burst
Transmit
burst
Drop
Ripple
Reference point GND:
External test pad connected to
and positioned closely to GND
pad F17
Reference point BATT+:
External test pad connected to
and positioned closely to BATT+
pad G15, H15, H16 or G16.
External application