Datasheet
M2Y1G64TU88D0B / M2Y2G64TU8HD0B / M2Y1G64TU88D4B / M2Y2G64TU8HD4B / M2Y1G64TU88D4B
M2Y1G64TU88D5B / M2Y2G64TU8HD5B / M2Y1G64TU88D6B / M2Y2G64TU8HD6B
M2Y1G64TU88D7B
1GB: 128M x 64 / 2GB: 256M x 64
Unbuffered DDR2 SDRAM DIMM
REV 1.2 1
10/2008
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
240pin Unbuffered DDR2 SDRAM MODULE
Based on 128Mx8 DDR2 SDRAM D-die
Features
Performance:
PC2-5300
PC2-6400
Unit
Speed Sort
-3C
-AC
DIMM Latency
*
5
5
f CK
Clock Frequency
333
400
MHz
t CK
Clock Cycle
3
2.5
ns
f DQ
DQ Burst Frequency
667
800
Mbps
• JEDEC Standard 240-pin Dual In-Line Memory Module
• 128Mx64 and 256Mx64 DDR2 Unbuffered DIMM based on
Elixir 128Mx8 DDR2 SDRAM D-die component
• Double Data Rate architecture; two data transfer per clock cycle
• Differential bi-directional data strobe (DQS & )
• DQS is edge-aligned with data for reads and is center-aligned
with data for writes
• Differential clock inputs (CK & )
• Intended for 333MHz/400MHz applications
• Inputs and outputs are SSTL-18 compatible
• V
DD
= V
DDQ
= 1.8V ± 0.1V
• 7.8 μs Max. Average Periodic Refresh Interval
•Programmable Operation:
- Device Latency: 3, 4, 5
- Burst Length: 4, 8
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 14/10/1 Addressing (row/column/rank) – 1GB
• 14/10/2 Addressing (row/column/rank) – 2GB
• Serial Presence Detect
• On Die Termination (ODT)
• OCD impedance adjustment.
• Gold contacts
• SDRAMs in 60-ball BGA Package
• RoHs Compliance.
Description
M2Y1G64TU88D0B, M2Y2G64TU8HD0B, M2Y1G64TU88D4B, M2Y2G64TU8HD4B, M2Y1G64TU88D5B, M2Y2G64TU8HD5B,
M2Y1G64TU88D6B, M2Y2G64TU8HD6B and M2Y1G64TU88D7B are 240-Pin Double Data Rate 2 (DDR2) Synchronous DRAM
Unbuffered Dual In-Line Memory Module (UDIMM), organized as one rank 128Mx64 and two ranks 256Mx64 high-speed memory array.
M2Y1G64TU88D0B, M2Y1G64TU88D4B, M2Y1G64TU88D5B, M2Y1G64TU88D6B and M2Y1G64TU88D7B use eight 128Mx8 DDR2
SDRAMs and M2Y2G64TU8HD0B M2Y2G64TU8HD4B, M2Y2G64TU8HD5B and M2Y2G64TU8HD6B use sixteen 128Mx8 DDR2
SDRAMs in BGA packages. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs.
The use of these common design files minimizes electrical variation between suppliers. All Elixir DDR2 SDRAM DIMMs provide a
high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.
The DIMM is intended for use in applications operating up to 333MHz (or 400MHz) clock speeds and achieves high-speed data transfer
rates of up to 667Mbps (or 800Mbps). Prior to any access operation, the device latency and burst / length /operation type must be
programmed into the DIMM by address inputs A0-A13 and I/O inputs BA0, BA1 and BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial 2,048-bit EEPROM using a standard IIC protocol. The first 128 bytes of
serial PD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.