User's Manual

9397 750 13595 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 4 October 2004 7 of 15
Philips Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
T
amb
= 25 °C.
t
p
= 8/20 µs exponential decay waveform;
see Figure 1.
(1) PESD3V3L1BA and PESD5V0L1BA.
(2) PESD12VL1BA; PESD15VL1BA; PESD24VL1BA.
Fig 3. Peak pulse power dissipation as a function of
pulse time; typical values.
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values.
T
amb
= 25 °C; f = 1 MHz.
(1) PESD3V3L1BA.
(2) PESD5V0L1BA.
T
amb
= 25 °C; f = 1 MHz.
(1) PESD12VL1BA.
(2) PESD15VL1BA.
(3) PESD24VL1BA.
Fig 5. Diode capacitance as a function of reverse
voltage; typical values.
Fig 6. Diode capacitance as a function of reverse
voltage; typical values.
006aaa066
10
3
10
2
10
4
P
pp
(W)
10
t
p
(µs)
110
4
10
3
10 10
2
(1)
(2)
T
j
(°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
P
pp
0
P
pp(25˚C)
V
R
(V)
054231
006aaa067
70
90
100
110
C
d
(pF)
50
60
80
(1)
(2)
V
R
(V)
0252010 155
006aaa068
8
12
4
16
20
C
d
(pF)
0
(1)
(2)
(3)