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MRFE6VP61K25HR6 MRFE6VP61K25HSR6

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial

(including laser and plasma exciters), broadcast (analog and digital), aerospace

and radio/land mobile applications. They are unmatched input and output

designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

! Typical Performance: V

=50Volts,I

= 100 mA

Signal Type

out

(W)

(MHz)

(dB)

(%)

IRL

(dB)

Pulsed (100 #sec,

20% Duty Cycle)

1250 Peak 230 24.0 74.0 -- 1 4

CW 1250 CW 230 22.9 74.6 -- 1 5

! Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,

230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,

1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μ sec

! Capable of 1250 Watts CW Operation

Features

! Unmatched Input and Output Allowing Wide Frequency Range Utilization

! Device can be used Single--Ended or in a Push--Pull Configuration

! Qualified Up to a Maximum of 50 V

Operation

! Characterized from 30 V to 50 V for Extended Power Range

! Suitable for Linear Application with Appropriate Biasing

! Integrated ESD Protection with Greater Negative Gate--Source Voltage

Range for Improved Class C Operation

! Characterized with Series Equivalent Large--Signal Impedance Parameters

! RoHS Compliant

! In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel options, see p. 12.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain--Source Voltage V

DSS

--0.5, +125 Vdc

Gate--Source Voltage V

--6.0, +10 Vdc

Storage Temperature Range T

stg

-- 65 to +150 $C

Case Operating Temperature T

150 $C

Total Device Dissipation @ T

=25$C

Derate above 25 $C

1333

6.67

W/$C

Operating Junction Temperature

(1,2)

225 $C

Table 2. Thermal Characteristics

Characteristic Symbol Value

(2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 66$C, 1250 W Pulsed, 100 #sec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz

Case Temperature 63$C, 1250 W CW, 100 mA, 230 MHz

0.03

0.15

$C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf

. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf

Select Documentation/Application Notes -- AN1955.

Document Number: MRFE6VP61K25H

Rev. 1, 1/2011

Freescale Semiconductor

Technical Data

1.8--600 MHz, 1250 W CW, 50 V

LATERAL N--CHANNEL

BROADBAND

RF POWER MOSFETs

MRFE6VP61K25HR6

MRFE6VP61K25HSR6

(Top View)

out

Figure 1. Pin Connections

out

CASE 375D--05, STYLE 1

NI--1230

MRFE6VP61K25HR6

CASE 375E--04, STYLE 1

NI--1230S

MRFE6VP61K25HSR6

PARTS ARE PUSH--PULL

& Freescale Semiconductor, Inc., 2010--2011.

ll rights reserved.

Summary of content (13 pages)

PAGE 1
Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
PAGE 2
Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) B (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4.
PAGE 3
VBIAS + C11 C10 C12 C13 R1 COAX1 Z11 Z3 RF INPUT Z1 Z5 Z7 Z9 L1 Z13 Z6 C4 Z8 C5 Z10 L2 Z14 C2 Z2 Z4 C1 C3 Z12 COAX2 R2 VBIAS + C6 C7 C8 C9 L3 C21 + + + C22 C23 C24 VSUPPLY Z19 COAX3 Z17 Z15 Z21 Z23 C16 Z25 Z27 C17 Z29 DUT C14 RF Z30 OUTPUT C15 C20 Z16 Z22 Z24 Z26 Z28 C18 Z18 COAX4 C19 Z20 L4 C25 Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 0.192″ x 0.082″ Microstrip 0.175″ x 0.082″ Microstrip 0.170″ x 0.100″ Microstrip 0.116″ x 0.285″ Microstrip 0.116″ x 0.
PAGE 4
-- C22 C13 C11 C12 -- C10 C23 C24 C21 COAX1 COAX3 R1 L3 C16 C3 L2 R2 COAX2 C17 C15 C14 C5 C18 CUT OUT AREA C1 C2 C4 L1 C20 C19 L4 COAX4 C25 C6 C7 C8 C9 C26 MRFE6VP61K25H Rev. 3 -- -- C27 C28 Figure 3. MRFE6VP61K25HR6(HSR6) Test Circuit Component Layout — Pulsed Table 5.
PAGE 5
TYPICAL CHARACTERISTICS 66 2000 Coss 100 10 Crss 1 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 0 10 20 30 P2dB = 61.7 dBm (1472 W) 64 63 P1dB = 61.
PAGE 6
TYPICAL CHARACTERISTICS 109 MTTF (HOURS) 108 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1250 W CW, and ηD = 74.6%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 10.
PAGE 7
Zsource f = 230 MHz Zo = 5 Ω Zload f = 230 MHz VDD = 50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak f MHz Zsource Ω Zload Ω 230 1.29 + j3.54 2.12 + j2.68 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 11.
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PACKAGE DIMENSIONS MRFE6VP61K25HR6 MRFE6VP61K25HSR6 8 RF Device Data Freescale Semiconductor
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MRFE6VP61K25HR6 MRFE6VP61K25HSR6 RF Device Data Freescale Semiconductor 9
PAGE 10
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 10 RF Device Data Freescale Semiconductor
PAGE 11
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 RF Device Data Freescale Semiconductor 11
PAGE 12
PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link.
PAGE 13
How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.