Manual

ManualsBrandsCommunication Concepts ManualsHardwareMJE243

April, 2009 − Rev. 13

1 Publication Order Number:

MJE243/D

MJE243 - NPN,

MJE253 - PNP

Complementary Silicon

Power Plastic Transistors

These devices are designed for low power audio amplifier and

low−current, high−speed switching applications.

Features

• High Collector−Emitter Sustaining Voltage −

CEO(sus)

= 100 Vdc (Min)

• High DC Current Gain @ I

= 200 mAdc

= 40−200

= 40−120

• Low Collector−Emitter Saturation Voltage −

CE(sat)

= 0.3 Vdc (Max) @ I

= 500 mAdc

• High Current Gain Bandwidth Product −

= 40 MHz (Min) @ I

= 100 mAdc

• Annular Construction for Low Leakages

CBO

= 100 nAdc (Max) @ Rated V

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

100 Vdc

Collector−Base Voltage V

100 Vdc

Emitter−Base Voltage V

7.0 Vdc

Collector Current − Continuous

− Peak

4.0

8.0

Adc

Base Current I

10 Adc

Total Power Dissipation @ T

= 25_C

Derate above 25_C

120

mW/_C

Total Power Dissipation @ T

= 25_C

Derate above 25_C

1.5

mW/_C

Operating and Storage Junction

Temperature Range

, T

stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

8.34

_C/W

Thermal Resistance,

Junction−to−Ambient

83.4

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

MJE243 TO−225 500 Units/Box

4.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

100 VOLTS, 15 WATTS

http://onsemi.com

MJE243G

TO−225

(Pb−Free)

500 Units/Box

TO−225

CASE 77

STYLE 1

MARKING DIAGRAM

YWW

JE2x3G

Y = Year

WW = Work Week

JE2x3 = Device Code

x = 4 or 5

G=Pb−Free Package

Preferred devices are recommended choices for future use

and best overall value.

MJE253 TO−225 500 Units/Box

MJE253G

TO−225

(Pb−Free)

500 Units/Box

Summary of content (6 pages)

PAGE 1
MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc • • • • http://onsemi.com hFE = 40 −200 = 40 −120 Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.
PAGE 2
MJE243 − NPN, MJE253 − PNP ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 − V − − 0.1 0.1 mA mA − 0.1 mAdc 40 15 180 − − − 0.3 0.6 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCE = 100 Vdc, IE = 0, TC = 125_C) ICBO Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO ON CHARACTERISTICS hFE DC Current Gain (IC = 200 mAdc, VCE = 1.
PAGE 3
MJE253 − PNP 16 1.6 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 100 80 120 TA PD, POWER DISSIPATION (WATTS) TC PD, POWER DISSIPATION (WATTS) MJE243 − NPN, 0 160 140 T, TEMPERATURE (°C) Figure 1. Power Derating VCC + 30 V 1K 500 300 200 RC 25 ms +11 V SCOPE RB 100 t, TIME (ns) 0 D1 51 - 9.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tr - 4 V 50 30 20 td 10 5 3 2 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.
PAGE 4
MJE243 − NPN, 10 100 ms IC, COLLECTOR CURRENT (AMP) 1.0 ms 1.0 dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.5 0.2 0.1 0.05 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e.
PAGE 5
MJE243 − NPN, MJE253 − PNP NPN MJE243 PNP MJE253 500 VCE = 1.0 V VCE = 2.0 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 300 200 200 TJ = 150°C 25°C 100 70 50 - 55°C 30 20 10 7.0 5.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 25°C - 55°C 30 20 10 7.0 5.0 3.0 2.0 0.04 0.06 4.0 VCE = 1.0 V VCE = 2.0 V TJ = 150°C 100 70 50 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 8. DC Current Gain 1.4 1.4 TJ = 25°C 1.2 1.2 1.0 1.0 0.8 0.
PAGE 6
MJE243 − NPN, MJE253 − PNP PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. C Q M −A− 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G R S 0.25 (0.010) M A M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.