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Broadband RF Power MOSFET

600W, to 80MHz, 50V

M/A-COM Products

Released - Rev. 07.07

MRF154

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Product Image

Designed primarily for linear large signal output stages in

the 2.0 to 100 MHz frequency range.

N–Channel enhancement mode MOSFET

• Specified 50 volts, 30 MHz characteristics

Output power = 600 watts

Power gain = 17 dB (typ.)

Efficiency = 45% (typ.)

Summary of content (9 pages)

PAGE 1
MRF154 Broadband RF Power MOSFET 600W, to 80MHz, 50V Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range. M/A-COM Products Released - Rev. 07.07 Product Image N–Channel enhancement mode MOSFET • Specified 50 volts, 30 MHz characteristics Output power = 600 watts Power gain = 17 dB (typ.) Efficiency = 45% (typ.) 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.
PAGE 2
MRF154 Broadband RF Power MOSFET 600W, to 80MHz, 50V M/A-COM Products Released - Rev. 07.07 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.
PAGE 3
MRF154 Broadband RF Power MOSFET 600W, to 80MHz, 50V M/A-COM Products Released - Rev. 07.07 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.
PAGE 4
MRF154 Broadband RF Power MOSFET 600W, to 80MHz, 50V M/A-COM Products Released - Rev. 07.07 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.
PAGE 5
MRF154 Broadband RF Power MOSFET 600W, to 80MHz, 50V M/A-COM Products Released - Rev. 07.07 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.
PAGE 6
MRF154 Broadband RF Power MOSFET 600W, to 80MHz, 50V M/A-COM Products Released - Rev. 07.07 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.
PAGE 7
MRF154 Broadband RF Power MOSFET 600W, to 80MHz, 50V M/A-COM Products Released - Rev. 07.07 RF POWER MOSFET CONSIDERATIONS The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate–to–drain (Cgd), and gate–to–source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain–to–source (Cds).
PAGE 8
MRF154 Broadband RF Power MOSFET 600W, to 80MHz, 50V CIRCUIT CONSIDERATIONS At high power levels (500 W and up), the circuit layout becomes critical due to the low impedance levels and high RF currents associated with the output matching. Some of the components, such as capacitors and inductors must also withstand these currents. The component losses are directly proportional to the operating frequency. The manufacturers M/A-COM Products Released - Rev. 07.
PAGE 9
MRF154 Broadband RF Power MOSFET 600W, to 80MHz, 50V M/A-COM Products Released - Rev. 07.07 9 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.