Datasheet

INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors BDT81/83/85/87
DESCRIPTION
·DC Current Gain -h
FE
= 40(Min)@ I
C
= 5A
·Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 60V(Min)- BDT81; 80V(Min)- BDT83;
100V(Min)- BDT85; 120V(Min)- BDT87
·Complement to Type BDT82/84/86/88
APPLICATIONS
·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃
a
)
SYMBOL PARAMETER VALUE UNIT
BDT81 60
BDT83 80
BDT85 100
V
CBO
Collector-Base Voltage
BDT87 120
V
BDT81 60
BDT83 80
BDT85 100
V
CEO
Collector-Emitter Voltage
BDT87 120
V
V
EBO
Emitter-Base Voltage 7 V
I
C
Collector Current-Continuous 15 A
I
CM
Collector Current-Peak 20 A
I
B
B Base Current 4 A
P
C
Collector Power Dissipation
T
C
=25℃
125 W
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature Range -65~150
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1
℃/W
R
th j-a
Thermal Resistance,Junction to Ambient 70
℃/W
isc Website：www.iscsemi.cn