Datasheet

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TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

● 8 A Continuous On-State Current

● 80 A Surge-Current

● Glass Passivated Wafer

● 400 V to 800 V Off-State Voltage

● Max I

of 20 mA

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.

2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate

linearly to zero at 110°C.

3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

4. This value applies for a maximum averaging time of 20 ms.

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage

TIC116D

TIC116M

TIC116S

TIC116N

DRM

400

600

700

800

Repetitive peak reverse voltage

TIC116D

TIC116M

TIC116S

TIC116N

RRM

400

600

700

800

Continuous on-state current at (or below) 70°C case temperature (see Note 1) I

T(RMS)

8 A

Average on-state current (180° conduction angle) at (or below) 70°C case temperature

(see Note 2)

T(AV)

5 A

Surge on-state current at (or below) 25°C case temperature (see Note 3) I

80 A

Peak positive gate current (pulse width

≤ 300 µs) I

3 A

Peak gate power dissipation (pulse width

≤ 300 µs) P

5 W

Average gate power dissipation (see Note 4) P

G(AV)

1 W

Operating case temperature range T

-40 to +110 °C

Storage temperature range T

stg

-40 to +125 °C

Lead temperature 1.6 mm from case for 10 seconds T

230 °C

Summary of content (6 pages)

PAGE 1
TIC116 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 2000, Power Innovations Limited, UK ● 8 A Continuous On-State Current ● 80 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 20 mA APRIL 1971 - REVISED JUNE 2000 TO-220 PACKAGE (TOP VIEW) K 1 A 2 G 3 Pin 2 is in electrical contact with the mounting base.
PAGE 2
TIC116 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM IRRM IGT TEST CONDITIONS Repetitive peak MAX UNIT TC = 110°C 2 mA IG = 0 TC = 110°C 2 mA VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs 20 mA VAA = 12 V RL = 100 Ω TC = - 40°C VD = rated VDRM off-state current Repetitive peak VR = rated VRRM reverse current Gate trigger current MIN TYP 8 2.
PAGE 3
TIC116 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 THERMAL INFORMATION AVERAGE ON-STATE CURRENT MAX ANODE POWER LOSS vs ON-STATE CURRENT DERATING CURVE 12 0° 180° Φ Conduction 10 Continuous DC Angle 8 6 Φ = 180° 4 2 40 50 60 70 80 90 100 110 TJ = 110°C 10 1 0·1 0·1 1 10 100 IT - Continuous On-State Current - A Figure 1. Figure 2.
PAGE 4
TIC116 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE vs GATE TRIGGER CURRENT vs CASE TEMPERATURE CASE TEMPERATURE TC03AA TC03AB 1 RL = 100 Ω VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA VAA =12 V tp(g) ≥ 20 µs 10 0·8 0·6 0·4 VAA =12 V RL = 100 Ω 0·2 1 -50 -25 0 25 50 75 100 tp(g) ≥ 20 µs 0 -50 125 -25 0 50 75 100 125 TC - Case Temperature - °C TC - Case Temperature - °C Figure 5. Figure 6.
PAGE 5
TIC116 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
PAGE 6
TIC116 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty.