Datasheet

ManualsBrandsComset Semiconductors ManualsDiscrete SemiconductorsThyristor TO-220 400 V 7.5 A

TIC126 SERIES

SILICON CONTROLLED RECTIFIERS

 

APRIL 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

●

12 A Continuous On-State Current

●

100 A Surge-Current

●

Glass Passivated Wafer

●

400 V to 800 V Off-State Voltage

●

Max I

of 20 mA

absolute maximum ratings over operating case temperature (unless otherwise noted)

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.

2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate

linearly to zero at 110°C.

3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

4. This value applies for a maximum averaging time of 20 ms.

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage

TIC126D

TIC126M

TIC126S

TIC126N

DRM

400

600

700

800

Repetitive peak reverse voltage

TIC126D

TIC126M

TIC126S

TIC126N

RRM

400

600

700

800

Continuous on-state current at (or below) 70°C case temperature (see Note 1) I

T(RMS)

12 A

Average on-state current (180° conduction angle) at (or below) 70°C case temperature

(see Note 2)

T(AV)

7.5 A

Surge on-state current at (or below) 25°C case temperature (see Note 3) I

100 A

Peak positive gate current (pulse width ≤ 300 µs) I

3 A

Peak gate power dissipation (pulse width ≤ 300 µs) P

5 W

Average gate power dissipation (see Note 4) P

G(AV)

1 W

Operating case temperature range T

-40 to +110 °C

Storage temperature range T

stg

-40 to +125 °C

Lead temperature 1.6 mm from case for 10 seconds T

230 °C

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

Summary of content (4 pages)

PAGE 1
TIC126 SERIES SILICON CONTROLLED RECTIFIERS ● 12 A Continuous On-State Current ● 100 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage K 1 ● Max IGT of 20 mA A 2 G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.
PAGE 2
TIC126 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM IRRM IGT Repetitive peak off-state current Repetitive peak reverse current Gate trigger current TEST CONDITIONS VD = rated VDRM MIN MAX UNIT TC = 110°C 2 mA 2 mA 20 mA VR = rated VRRM IG = 0 TC = 110°C VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs VAA = 12 V RL = 100 Ω TC = - 40°C TYP 8 2.5 tp(g) ≥ 20 µs VGT Gate trigger voltage VAA = 12 V RL = 100 Ω 0.
PAGE 3
TIC126 SERIES SILICON CONTROLLED RECTIFIERS THERMAL INFORMATION MAX ANODE POWER LOSS vs ON-STATE CURRENT AVERAGE ON-STATE CURRENT DERATING CURVE TI03AE PA - Max Continuous Anode Power Dissipated - W IT(AV) - Maximum Average On-State Current - A 16 14 Continuous DC 12 10 Φ = 180º 8 6 4 0° 180° Φ Conduction 2 Angle 0 30 40 50 60 70 80 90 100 TI03AF 100 TJ = 110°C 10 1 0·1 0·1 110 TC - Case Temperature - °C 10 100 Figure 1. Figure 2.
PAGE 4
TIC126 SERIES SILICON CONTROLLED RECTIFIERS TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE vs GATE TRIGGER CURRENT vs CASE TEMPERATURE CASE TEMPERATURE TC03AA TC03AB 1 VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs 10 0·8 0·6 0·4 VAA =12 V RL = 100 Ω 0·2 1 -50 -25 0 25 50 75 100 tp(g) ≥ 20 µs 0 -50 125 -25 0 25 75 100 125 TC - Case Temperature - °C TC - Case Temperature - °C Figure 5. Figure 6.