Datasheet

TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
4
APRIL 1971 - REVISED MARCH 1997
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
Figure 5. Figure 6.
A
V
E
R
A
G
E
O
N
-
S
T
A
T
E
C
U
R
R
E
N
T
T
C
- Case Temperature - °C
30 40 50 60 70 80 90 100 110
I
T(AV)
- Maximum Average On-State Current - A
0
2
4
6
8
10
12
14
16
TI03AE
DERATING CURVE
ΦΦ = 180º
Continuous DC
Conduction
Angle
ΦΦ
0° 180°
MAX CONTINUOUS ANODE POWER DISSIPATED
I
T
- Continuous On-State Current - A
0·1 1 10 100
P
A
- Max Continuous Anode Power Dissipated - W
0·1
1
10
100
TI03AF
T
J
= 110°C
CONTINUOUS ON-STATE CURRENT
vs
S
U
R
G
E
O
N
-
S
T
A
T
E
C
U
R
R
E
N
T
Consecutive 50 Hz Half-Sine-Wave Cycles
1 10 100
I
TM
- Peak Half-Sine-Wave Current - A
1
10
100
TI03AG
CYCLES OF CURRENT DURATION
vs
T
C
≤≤ 80°C
No Prior Device Conduction
Gate Control Guaranteed
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
N
C
E
Consecutive 50 Hz Half-Sine-Wave Cycles
1 10 100
R
θ θJC(t)
- Transient Thermal Resistance - °C/W
1
10
100
TI03AH
CYCLES OF CURRENT DURATION
vs