Datasheet

ManualsBrandsComset Semiconductors ManualsDiscrete SemiconductorsTriac TO-220AB 400 V 6 A

TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S

Page 1 of 3

SEMICONDUCTORS

DESCRIPTION

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state

to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.

ABSOLUTE MAXIMUM RATINGS

Value Unit

Symbol Ratings

A B D M S N

DRM

Repetitive peak off-state voltage

(see Note1)

100 200 400 600 700 800 V

T(RMS)

Full-cycle RMS on-state current at (or

below) 70°C case temperature (see note2)

6 A

TSM

Peak on-state surge current full-sine-wave

(see Note3)

60 A

TSM

Peak on-state surge current half-sine-wave

(see Note4)

70 A

Peak gate current ± 1 A

Peak gate power dissipation at (or below)

85°C case temperature (pulse width ≤200

µs)

2.2 W

G(AV)

Average gate power dissipation at (or

below) 85°C case (see Note5)

0.9 W

Operating case temperature range -40 to +110 °C

stg

Storage temperature range -40 to +125 °C

Lead temperature 1.6 mm from case for 10

seconds

230 °C

SILICON BIDIRECTIONAL TRIODE THYRISTOR

• 6 A RMS

• Glass Passivated Wafer

• 100 V to 800 V Off-State Voltage

• Max I

of 5 mA (Quadrants 1-3)

• Sensitive gate triacs

• Compliance to ROHS

Summary of content (3 pages)

PAGE 1
SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • 6 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1-3) Sensitive gate triacs Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
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SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S Notes: 1. 2. 3. 4. 5. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 150 mA/°C. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
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SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S Note 6: This parameters must be measured using pulse techniques, tW = ≤1µs, duty cycle ≤ 2 %, voltage-sensing contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body. Note 7: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz.