Datasheet

TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
Page 1 of 3
SEMICONDUCTORS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Value Unit
Symbol Ratings
B C D E M S N
V
DRM
Repetitive peak off-state voltage
(see Note1)
200 300 400 500 600 700 800 V
I
T(RMS)
Full-cycle RMS on-state current at (or
below) 70°C case temperature (see note2)
16 A
I
TSM
Peak on-state surge current full-sine-wave
(see Note3)
125 A
I
GM
Peak gate current ± 1 A
T
C
Operating case temperature range -40 to +110 °C
T
stg
Storage temperature range -40 to +125 °C
T
L
Lead temperature 1.6 mm from case for 10
seconds
230 °C
Notes:
1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal
1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate
linearly to 110°C case temperature at the rate of 400 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
SILICON BIDIRECTIONAL TRIODE THYRISTOR
• High current triacs
• 16 A RMS
• 70 A Peak
• Glass Passivated Wafer
• 200 V to 800 V Off-State Voltage
• Max I
GT
of 50 mA (Quadrants 1-3)
• 125 A peak current
• Com
p
liance to ROHS