Datasheet

ManualsBrandsComset Semiconductors ManualsDiscrete SemiconductorsDarlington Transistor, SOT-93, PNP, -100V

September, 2005 − Rev. 5

1 Publication Order Number:

TIP140/D

TIP140, TIP141, TIP142,

(NPN); TIP145, TIP146,

TIP147, (PNP)

TIP141, TIP142, TIP146, and TIP147 are Preferred Devices

Darlington Complementary

Silicon Power Transistors

Designed for general−purpose amplifier and low frequency

switching applications.

Features

• High DC Current Gain −

Min h

= 1000 @ I

= 5.0 A, V

= 4 V

• Collector−Emitter Sustaining Voltage − @ 30 mA

CEO(sus)

= 60 Vdc (Min) − TIP140, TIP145

= 80 Vdc (Min) − TIP141, TIP146

= 100 Vdc (Min) − TIP142, TIP147

• Monolithic Construction with Built−In Base−Emitter Shunt Resistor

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol

TIP140

TIP145

TIP141

TIP146

TIP142

TIP147

Unit

Collector − Emitter Voltage V

CEO

60 80 100 Vdc

Collector − Base Voltage V

60 80 100 Vdc

Emitter − Base Voltage V

5.0 Vdc

Collector Current

− Continuous

− Peak (Note 1)

Adc

Base Current − Continuous I

0.5 Adc

Total Power Dissipation

@ T

= 25_C

125 W

Operating and Storage

Junction Temperature Range

, T

stg

−65 to +150

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case

1.0 °C/W

Thermal Resistance,

Junction−to−Ambient

35.7 °C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. 5 ms, v 10% Duty Cycle.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

10 AMPERE

DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−100 VOLTS, 125 WATTS

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

SOT−93 (TO−218)

CASE 340D

STYLE 1

MARKING DIAGRAM

A = Assembly Location

Y = Year

WW = Work Week

TIP14x = Device Code

x = 0, 1, 2, 5, 6, or 7

G = Pb−Free Package

AYWWG

TIP14x

Summary of content (7 pages)

PAGE 1
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) TIP141, TIP142, TIP146, and TIP147 are Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − • • • Min hFE = 1000 @ IC = 5.
PAGE 2
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) DARLINGTON SCHEMATICS NPN TIP140 TIP141 TIP142 PNP TIP145 TIP146 TIP147 COLLECTOR BASE COLLECTOR BASE ≈ 8.0 k ≈ 40 ≈ 8.
PAGE 3
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ
PAGE 4
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) TYPICAL CHARACTERISTICS NPN TIP140, TIP141, TIP142 PNP TIP145, TIP146, TIP147 20,000 TJ = 150°C TJ = 150°C 100°C hFE , DC CURRENT GAIN 25°C 2000 − 55 °C 1000 500 7000 25°C 5000 − 55 °C 3000 2000 VCE = 4.0 V 300 0.5 VCE(SAT), COLLECTOR−EMITTER SATURATION VOLTAGE (VOLTS) 100°C 10,000 VCE = 4.0 V 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.0 1000 0.5 10 0.7 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.
PAGE 5
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) ACTIVE−REGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
PAGE 6
hfe , SMALL−SIGNAL FORWARD CURRENT TRANSFER RATIO TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) 100 70 50 VCE = 10 V IC = 1.0 A TJ = 25°C PNP PNP NPN 20 10 7.0 5.0 NPN 2.0 1.0 1.0 2.0 3.0 5.0 f, FREQUENCY (MHz) 7.0 10 Figure 9. Magnitude of Common Emitter Small−Signal Short−Circuit Forward Current Transfer Ratio PD, POWER DISSIPATION (WATTS) 5.0 4.0 3.0 2.0 1.0 0 0 40 80 120 160 TA, FREE−AIR TEMPERATURE (°C) 200 Figure 10.
PAGE 7
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E DIM A B C D E G H J K L Q S U V 4 A L 1 K 2 3 D J H MILLIMETERS MIN MAX −−− 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF −−− 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. V G INCHES MIN MAX −−− 0.