Datasheet

©2000 Fairchild Semiconductor International Rev. A, February 2000
TIP145/146/147
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP145
: TIP146
: TIP147
- 60
- 80
- 100
V
V
V
V
CEO
Collector-Emitter Voltage : TIP145
: TIP146
: TIP147
- 60
- 80
- 100
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 10 A
I
CP
Collector Current (Pulse) - 15 A
I
B
Base Current (DC) - 0.5 A
P
C
Collector Dissipation (T
C
=25°C) 125 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage
: TIP145
: TIP146
: TIP147
I
C
= - 30mA, I
B
= 0 - 60
- 80
- 100
V
V
V
I
CEO
Collector Cut-off Curren
: TIP145
: TIP146
: TIP147
V
CE
= - 30V, I
B
= 0
V
CE
= - 40V, I
B
= 0
V
CE
= - 50V, I
B
= 0
- 2
- 2
- 2
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP145
: TIP146
: TIP147
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
- 1
- 1
- 1
mA
mA
mA
I
EBO
Emitter Cut-off Current V
BE
= - 5V, I
C
= 0 - 2 mA
h
FE
DC Current Gain V
CE
= - 4V,I
C
= - 5A
V
CE
= - 4V, I
C
= - 10A
1000
500
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= - 5A, I
B
= - 10mA
I
C
= - 10A, I
B
= - 40mA
- 2
- 3
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= - 10A, I
B
= - 40mA - 3.5 V
V
BE
(on) Base-Emitter ON Voltage V
CE
= - 4V, I
C
= - 10A - 3 V
t
D
Delay Time V
CC
= - 30V, I
C
= - 5A
I
B1
= -20mA, I
B2
= 20mA
R
L
= 6Ω
0.15 µs
t
R
Rise Time 0.55 µs
t
STG
Storage Time 2.5 µs
t
F
Fall Time 2.5 µs
TIP145/146/147
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
• High DC Current Gain : h
FE
= 1000 @ V
CE
= -4V, I
C
= -5A (Min.)
• Industrial Use
• Complement to TIP140/141/142
Equivalent Circuit
B
E
C
R1
R2
R18kΩ≅
R20.12kΩ≅
TO-3P
1
1.Base 2.Collector 3.Emitter