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123456
BF256B — N-Channel RF Amplifiers
© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BF256B Rev. 1.1.0
November 2014
BF256B
N-Channel RF Amplifiers
Features
• This device is designed for VHF / UHF amplifiers
• Sourced from process 50
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
BF256B BF256B TO-92 3L Bulk
Symbol Parameter Value Unit
V
DG
Drain-Gate Voltage 30 V
V
GS
Gate-Source Voltage -30 V
I
GF
Forward Gate Current 10 mA
T
J
, T
STG
Operating and Storage Temperature Range -55 to 150 °C
Symbol Parameter Value Unit
P
D
Total Device Dissipation at T
A
= 25°C 350 mW
Derate Above 25°C2.8mW/°C
TO-92
1. Gate 2. Source 3. Drain
1