Data Sheet

BF256B — N-Channel RF Amplifiers
© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BF256B Rev. 1.1.0 2
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Unit
V
(BR)GSS
Gate-Source Breakdown Voltage V
DS
= 0, I
G
= 1 μA-30 V
V
GS
Gate-Source Voltage V
DS
= 15 V, I
D
= 200 μA -0.5 -7.5 V
V
GS
(off) Gate-Source Cut-Off Voltage V
DS
= 15 V, I
D
= 10 nA -0.5 -8.0 V
I
GSS
Gate Reverse Current V
GS
= -20 V, V
DS
= 0 -5 nA
I
DSS
Zero-Gate Voltage Drain Current V
DS
= 15 V, V
GS
= 0 6 13 mA
gfs
Common Source Forward
Transconductance
V
DS
= 15 V, V
GS
= 0,
f= 1 kHz
4.5 mmhos