Data Sheet

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20
STERN
[£ii£u
<=5£>ni-L.onaucto'i
Lr'iodi
j
AVE.
JLCtl,
Una.
SPRINGFIELD,
NEW
JERSEY
07081
U.S.A.
IM-Channel
Junction
Field-Effect
Transistors
BF
245
A
BF
245 B
BF246C
BF
245 A, B, and C are
N-channel
junction
field-effect transistors
in
plastic package
similar
to TO 92 (10 A 3 DIN
41868).
They
are
amplifiers.
particularly suitable
for use in dc, AF and RF
2,5max
L
r
I
12.7
mln
-H
I
5,2
max
DSG
f$b
"i
r*~
4,8
max
Approx.
weight
0.25
g
Dimension*
in mm
Maximum
ratings
Drain-source
voltage
Drain-gate
voltage
(/s
* 0)
Gate-source
voltage
(/o
= 0)
Drain current
Gate
current
Junction
temperature
Storage
temperature range
Total
power dissipation
(Tamb
&
75°C)1)
±VDS
30
+VDQ
30
-VGS
30
ID
25
/a
10
3 150
Trtg
-65
to
+160
Ptot
300
V
V
V
mA
mA
"C
°C
mW
Thermal resistance
Junction
to
ambient
air
"thJA
5260
I
K/W1)
Static
characteristics
(Tj
-
25
°C)
Gate
cutoff
current
(-VGS
" 20
V.
vbs
-
0,
7,
-
1
25'C)
Gate-source
breakdown
voltage
Drain-source
short-circuit
current
(Vbs=15V,VGs-0)
Gate-source
voltage
Gate-source
pinch-off
voltage
(V/bs-16V,/D=10nA)
Dynamic characteristics
(ramb
=
25
°C)
Four-pole
characteristics
(Vbs*16V,VQs-0,/=1
kHz)
(VDs
"
15
V.
VQS
-
0,
f
= 200
MHz)
(Vos
"
20 V,
-VQS
= 1 V, f - 1
MHz)
Cutoff
frequency
of
short-circuit
forward
transfer
admittance1
>
Noise
figure
(VDs-1SV.VQS»0(flj-1
f100MH»,r.mb-25l>C)
-/ess
-/QSS
'^BfllGSS
BF245A:
/oss
BF245B:
/DSS
BF245C:
/OSS
BF245A:
-Vfes
BF
245 B:
-VQS
BF245C:
-VQS
-*
1X21
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011
1/2151
922s
Ci
j.
C12.
C22,
^
WF
£5
£500
230
2.0 to 6.5
6to15
12
to 26
0.4 to 2.2
1.6
to
3.8
3.2 to 7.5
0.5
to 8.0
3.0 to 6.5
25
250
8
40
4.0
1.1
1.6
700
1.6
nA
nA
V
mA2>
mA
mA
vzi
V
V
V
mS
US
US
mS
us
PF
PF
MHz
dB
N
I
Semi-t
vuiduciori
reserves
the
right
10
change
teal
conditions.
panmeMr
limits
wd
packug«
Uimcmions
wilhom
notice
In
formation
furnished
by NJ
Svmi-Cunduclon
a
belwv«d
to
h«
hiilh
accurate
and
rdiubte
H
the
lime
of
guinj
to
pros*.
However
M
.nidutiors
.IV.IMIKS
IHI
responsibility
I'nr
iiny
ermrs
or
o.ni-isiniM
Jijcuvcred
in Us
use
NJ
.Semi4.oiiduih.rs
cncouriges
..,.:
i,,
1,-n'ii
ih
n
.l'iin-:h.vr<i
iw
.
urn-ni
tirSiie
nliiciny
iinli»r»

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