Data Sheet

© Semiconductor Components Industries, LLC, 2012
June, 2012 Rev. 7
1 Publication Order Number:
BC546/D
BC546B, BC547A, B, C,
BC548B, C
Amplifier Transistors
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector - Emitter Voltage
BC546
BC547
BC548
V
CEO
65
45
30
Vdc
Collector - Base Voltage
BC546
BC547
BC548
V
CBO
80
50
30
Vdc
Emitter - Base Voltage V
EBO
6.0 Vdc
Collector Current Continuous I
C
100 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoAmbient
R
q
JA
200 °C/W
Thermal Resistance, JunctiontoCase
R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
2
3
1
2
BENT LEAD
TAPE & REEL
STRAIGHT LEAD
3
TO92
CASE 29
STYLE 17
MARKING DIAGRAM
BC
54xy
AYWW G
G
x = 6, 7, or 8
y = A, B or C
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)

Summary of content (6 pages)