Data Sheet

ManualsBrandsConrad Components ManualsEducation & Development Kits3-channel Light organ Version: Assembly kit 230 V AC

September, 2011 − Rev. 10

1 Publication Order Number:

C106/D

C106 Series

Sensitive Gate Silicon

Controlled Rectifiers

Reverse Blocking Thyristors

Glassivated PNPN devices designed for high volume consumer

applications such as temperature, light, and speed control; process and

remote control, and warning systems where reliability of operation is

important.

Features

• Glassivated Surface for Reliability and Uniformity

• Power Rated at Economical Prices

• Practical Level Triggering and Holding Characteristics

• Flat, Rugged, Thermopad Construction for Low Thermal Resistance,

High Heat Dissipation and Durability

• Sensitive Gate Triggering

• These are Pb−Free Devices

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Characteristic

Symbol Max Unit

Peak Repetitive Off−State Voltage (Note 1)

(Sine Wave, 50−60 Hz, R

= 1 kW,

= −40° to 110°C)

C106B

C106D, C106D1*

C106M, C106M1*

DRM,

RRM

200

400

600

On-State RMS Current

(180° Conduction Angles, T

= 80°C)

T(RMS)

4.0 A

Average On−State Current

(180° Conduction Angles, T

= 80°C)

T(AV)

2.55 A

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz, T

= +25°C)

TSM

20 A

Circuit Fusing Considerations (t = 8.3 ms) I

t 1.65 A

Forward Peak Gate Power

(Pulse Width v1.0 msec, T

= 80°C)

0.5 W

Forward Average Gate Power

(Pulse Width v1.0 msec, T

= 80°C)

G(AV)

0.1 W

Forward Peak Gate Current

(Pulse Width v1.0 msec, T

= 80°C)

0.2 A

Operating Junction Temperature Range T

−40 to

+110

°C

Storage Temperature Range T

stg

−40 to

+150

°C

Mounting Torque (Note 2)

−

6.0 in. lb.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. V

DRM

and V

RRM

for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

2. Torque rating applies with use of compression washer (B52200F006).

Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink

thermal resistance. Anode lead and heatsink contact pad are common.

TO−225AA

CASE 077

STYLE 2

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

SCRs

4 A RMS, 200 − 600 Volts

http://onsemi.com

MARKING DIAGRAM & PIN ASSIGNMENT

Y = Year

WW = Work Week

C106xx = Device Code

xx = B, D, D1, M, M1

G = Pb−Free Package

YWW

C106xxG

1. Cathode

2. Anode

3. Gate

Summary of content (6 pages)

PAGE 1
C106 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important.
PAGE 2
C106 Series THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.0 °C/W Thermal Resistance, Junction−to−Ambient RqJA 75 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit − − − − 10 100 mA mA − − 2.2 V − − 15 35 200 500 − − 6.0 0.4 0.5 0.60 0.
PAGE 3
C106 Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM + Voltage IDRM at VDRM Reverse Blocking Region (off state) Forward Blocking Region (off state) Reverse Avalanche Region Anode − 110 TC, CASE TEMPERATURE ( °C) 100 90
PAGE 4
C106 Series 1000 IH, HOLDING CURRENT ( m A) IGT, GATE TRIGGER CURRENT ( mA) 100 10 1 -40 -25 -10 5 20 35 50 65 80 95 10 -40 -25 110 -10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Typical Gate Trigger Current versus Junction Temperature Figure 4. Typical Holding Current versus Junction Temperature 1.0 110 1000 0.9 I L , LATCHING CURRENT (m A) VGT , GATE TRIGGER VOLTAGE (V) 100 0.8 0.7 0.6 0.5 0.4 100 0.3 0.
PAGE 5
C106 Series PACKAGE INTERCHANGEABILITY The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-106 package with competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for mounting compatibility. .295 ____ .305 .145 ____ .155 .115 ____ .130 .148 ____ .158 .425 ____ .435 .400 ____ .360 .095 ____ .
PAGE 6
C106 Series PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F Q −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.