International Rectifier HEXFET® Power SAMOSET IRC540 Peg = 100V Rosin = 0.077 Io = 28A * Dynamic vivid Rating + Repetitive Avalanche Rated D * Current Sense + 175°C Operating Temperature Kelvin * Fast Switching al ih Spurs * Ease of Paralleling H Torrent » Simple Drive Requirements S Sense Description “Third Generation HELMETS from International Rectifier provide the designer with the chest combination of fast switching, rugged device design, low on-resistance and cost-effectiveness.
IRC540 Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Mir, | Typ. | Mex | Units “Test Conditions Vireos Drain do-Source Breakdown Collage | 100 Volvo, lo= 250pA Anapests Breakdown Voltage Temp Coefficient | — | 0:19 | — | VPC | Forbearance to 25°C, Jo= mA Fon) Static Drain to-Source On-Resistance — | — [0.077 (| Vea=i0V, Ves Gate Threshold Voltage stoves Be Forward Trans conductance. aboveboard, Vos=100V, Savage = Drain-Source Leakage Current TT Mt es vee sv.
I. Drain Current {Amps) Ip, Drain Current {Amps} Vos, Drain-to-Source Vantages (volts) Fig 1. Typical Output Characteristics, To=26°C aw ps = SOV 20us PULSE WIDTH Vas, Gate-to-Source Voltage (volts) sal Fig 3. Typical Transfer Characteristics Ip, Drains Current (Amie) Fission Drain-lo-Source On Resistance (Normalized) IRC540 Bue PULSE WIDTH] Tp = 37550 wh sol Vis, Drain to-Source Voltage {volts} Fig 2. Typical Output Characteristics, To=175°C IOV © OFT Tao 100120 140 160 180 Ty.
IRC540 Dez 155 = Cge + Coo Cag SHORTED) Capacitance {pF} Vas. Gate-to-Source Voltage (volts) FOR TEST CIRCUIT SEE FLOUR 13 or EER Vps, Darin-to-Source Voltage (volts Q, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 10%, 2 . etn Geese 2 3 2 are Ves oO . singe oust byr Source-to-Drain Voltage (vats) Vpg. Dr air-to-Saurce Voltage (vats) Fig 7. Typical Source-Drain Diode Fig 8.
ip. Drain Current (Rps) IRC540 DUT. Von Polo WDE Tas Duly Factor 533% [re SHEETS ET Tes dE fe 11S Te, Case Temperature (°C) on Gey Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Wave forms Case Temperature Thermal Response (Zorch) Fig 11. 107 0 TT ree ory micron, weg .
IRC540 Brainstorming VBS > required fax Von som Vos Fig 12b. Unclasped Inductive Wave forms oy | Gas +— Osp Va [ET — Fig 13a. Basic Gate Charge Waveform EF o we 11d En Ed BOTTOM 28s ES Egg. Single Pulse Energy (mJ) Bow om ow us mus Starting T,, Junction Fig 12¢. Maximum Avalanche Energy Va. Drain Current Urgent Reggie : THI, Carson Sapling Fusiliers Fig 13h.
IRC540 CURRENT TRANSFORMER “Body Dis Forward Ee BUT. Ugg Saskatoon Gia pass so collage ody Diode) Forward trip icc «CONTROVERTED EY Py © DARNER SANE VICE GRIP AS DUT +45 CONTROLLED BY OUT FACTOR 3" Fig 14. Peak Diode Recovery avid Test Circuit Vos TIE E32 Junction Temperature (°C) Ip, Drain Currant (Amps) Fig 15. Typical Hex Sense Ratio Vs. Fig 16. Typical Hex Sense Ratio Vs.
IRC540 My ¥ Sense Ratio HIGH SPEED DIGITAL VOLTMETERS Ass, Gate-to-Source Voltage volts) Fig 17. Typical Hex Sense Ratio Vs. Fig 18. Hex Sense Ratio Test Circuit Gate Voltage Charabancs Meter igh Terminal 520K | Lt WA Cement BOOK Capacitance Meter on Terminal Fig 19.