Data Sheet

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DATA SHEET

Product speciﬁcation

Supersedes data of April 1992

File under Discrete Semiconductors, SC01

1996 Apr 26

DISCRETE SEMICONDUCTORS

BZX55 series

Voltage regulator diodes

M3D176

Summary of content (8 pages)

PAGE 1
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 26
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Philips Semiconductors Product specification Voltage regulator diodes BZX55 series FEATURES DESCRIPTION • Total power dissipation: max. 500 mW Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. • Tolerance series: ±5% The diodes are available in the normalized E24 ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZX55-C2V4 to BZX55-C75). • Working voltage range: nom. 2.
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1996 Apr 26 MAX. 2.56 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 MIN. 2.28 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.
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1996 Apr 26 44.0 48.0 47 51 4 79.0 72.0 66.0 60.0 54.0 50.0 46.0 41.0 38.0 35.0 32.0 1500 1000 1000 1000 700 700 600 500 220 220 220 220 220 220 MAX. at IZ 250 200 150 135 125 110 90 90 80 80 80 80 80 55 MAX. at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) 78.0 70.0 62.0 55.0 49.0 44.0 38.7 35.1 32.4 29.7 27.0 22.9 20.4 18.7 TYP. 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 5 5 5 5 5 5 TEMP. COEFF.
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Philips Semiconductors Product specification Voltage regulator diodes BZX55 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 8 mm 300 K/W Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W Note 1. Device mounted on a printed circuit-board without metallization pad.
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Philips Semiconductors Product specification Voltage regulator diodes BZX55 series GRAPHICAL DATA MBG930 103 handbook, full pagewidth δ=1 Rth j-a 0.75 0.50 0.33 0.20 (K/W) 102 0.10 0.05 0.02 0.01 ≤0.001 10 tp δ= T 1 10−1 1 102 10 103 104 tp T tp (ms) 105 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 duration (ms) 0 0.
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Philips Semiconductors Product specification Voltage regulator diodes BZX55 series MBG783 MBG782 0 10 handbook, halfpage handbook, halfpage 12 SZ (mV/K) SZ (mV/K) 4V3 11 10 −1 9V1 5 3V9 8V2 7V5 6V8 3V6 −2 6V2 5V6 5V1 0 3V3 4V7 3V0 2V4 2V7 −3 0 20 40 IZ (mA) −5 60 BZX55-C2V4 to C4V3. Tj = 25 to 150 °C. Fig.5 4 8 12 16 IZ (mA) 20 BZX55-C4V7 to C12. Tj = 25 to 150 °C. Temperature coefficient as a function of working current; typical values. 1996 Apr 26 0 Fig.
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Philips Semiconductors Product specification Voltage regulator diodes BZX55 series PACKAGE OUTLINE handbook, full pagewidth 0.56 max 1.85 max 4.25 max 25.4 min 25.4 min MLA428 - 1 Dimensions in mm. Fig.7 SOD27 (DO-35). DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.