Data Sheet

1996 Apr 26 4
Philips Semiconductors Product specification
Voltage regulator diodes BZX55 series
Note 1. For BZX55-C2V4 up to C36 I
Z
= 1 mA; for C39 up to C75 I
Z
= 0.5 mA.
22
20.8 23.3 220 55 18.7 5 60 0.1 2 16.5 1.25
24
22.8 25.6 220 80 20.4 5 55 0.1 2 18.0 1.25
27 25.1 28.9 220 80 22.9 5 50 0.1 2 20.25 1.0 30 28.0 32.0 220 80 27.0 5 50 0.1 2 22.25 1.0 33 31.0 35.0 220 80 29.7 5 45 0.1 2 24.75 0.9 36 34.0 38.0 220 80 32.4 5 45 0.1 2 27.0 0.8 39 37.0 41.0 500 90 35.1 2.5 45 0.1 2 29.25 0.7 43 40.0 46.0 600 90 38.7 2.5 40 0.1 2 32.25 0.6 47 44.0 50.0 700 110 44.0 2.5 40 0.1 2 35.25 0.5 51 48.0 54.0 700 125 49.0 2.5 40 0.1 2 38.25 0.4 56 52.0 60.0 1000 135 55.0 2.5 40 0.1 2 42.0 0.3 62 58.0 66.0 1000 150 62.0 2.5 35 0.1 2 46.5 0.3 68 64.0 72.0 1000 200 70.0 2.5 35 0.1 2 51.0 0.25 75 70.0 79.0 1500 250 78.0 2.5 35 0.1 2 56.25 0.2
BZX55-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 5 and 6
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE CURRENT at
REVERSE VOLTAGE
I
R
(µA)
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A)
at t
p
= 100 µs;
T
amb
= 25 °C
at
I
Z
at
I
Ztest
at
T
j
= 25 °C
at
T
j
= 150 °C
V
R
(V)
MIN. MAX. MAX. MAX. TYP. MAX. MAX. MAX. MAX.