Data Sheet

1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
6
01.11.2003
BC 546 ... BC 549 General Purpose Transistors
NPN Si-Epitaxial PlanarTransistors NPN
Power dissipation – Verlustleistung 500 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25/C) Grenzwerte (T
A
= 25/C)
BC 546 BC 547 BC 548/549
Collector-Emitter-voltage B open V
CE0
65 V 45 V 30 V
Collector-Emitter-voltage B shorted V
CES
85 V 50 V 30 V
Collector-Base-voltage E open V
CB0
80 V 50 V 30 V
Emitter-Base-voltage C open V
EB0
6 V 6 V 5 V
Power dissipation – Verlustleistung P
tot
500 mW
1
)
Collector current – Kollektorstrom (DC) I
C
100 mA
Peak Coll. current – Kollektor-Spitzenstrom I
CM
200 mA
Peak Base current – Basis-Spitzenstrom I
BM
200 mA
Peak Emitter current – Emitter-Spitzenstrom - I
EM
200 mA
Junction temp. – Sperrschichttemperatur T
j
150/C
Storage temperature – Lagerungstemperatur T
S
- 65…+ 150/C
Characteristics, T
j
= 25/C Kennwerte, T
j
= 25/C
Group A Group B Group C
DC current gain – Kollektor-Basis-Stromverhältnis
V
CE
= 5 V, I
C
= 10 :Ah
FE
typ. 90 typ. 150 typ. 270
V
CE
= 5 V, I
C
= 2 mA h
FE
110...220 200...450 420...800
V
CE
= 5 V, I
C
= 100 mA h
FE
typ. 120 typ. 200 typ.400
h-Parameters at V
CE
= 5V, I
C
= 2 mA, f = 1 kHz
Small signal current gain – Stromverst. h
fe
typ. 220 typ. 330 typ. 600
Input impedance – Eingangsimpedanz h
ie
1.6...4.5 kS 3.2...8.5 kS 6...15 kS
Output admittance – Ausgangsleitwert h
oe
18 < 30 :S 30 < 60 :S 60 < 110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung
h
re
typ.1.5 *10
-4
typ. 2 *10
-4
typ. 3 *10
-4