Data Sheet

1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC327 BC328 Unit
Collector–Emitter Voltage V
CEO
–45 –25 Vdc
Collector–Base Voltage V
CBO
–50 –30 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–800 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
JA
200 °C/W
Thermal Resistance, Junction to Case
R
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA, I
B
= 0) BC327
BC328
V
(BR)CEO
–45
–25
—
—
—
—
Vdc
Collector–Emitter Breakdown Voltage
(I
C
= –100 µA, I
E
= 0) BC327
BC328
V
(BR)CES
–50
–30
—
—
—
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
= –10 A, I
C
= 0)
V
(BR)EBO
–5.0 — — Vdc
Collector Cutoff Current
(V
CB
= –30 V, I
E
= 0) BC327
(V
CB
= –20 V, I
E
= 0) BC328
I
CBO
—
—
—
—
–100
–100
nAdc
Collector Cutoff Current
(V
CE
= –45 V, V
BE
= 0) BC327
(V
CE
= –25 V, V
BE
= 0) BC328
I
CES
—
—
—
—
–100
–100
nAdc
Emitter Cutoff Current
(V
EB
= –4.0 V, I
C
= 0)
I
EBO
— — –100 nAdc
Order this document
by BC327/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER