Data Sheet

2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= –100 mA, V
CE
= –1.0 V) BC327/BC328
BC327–16/BC328–16
BC327–25/BC328–25
(I
C
= –300 mA, V
CE
= –1.0 V)
h
FE
100
100
160
40
—
—
—
—
630
250
400
—
—
Base–Emitter On Voltage
(I
C
= –300 mA, V
CE
= –1.0 V)
V
BE(on)
— — –1.2 Vdc
Collector–Emitter Saturation Voltage
(I
C
= –500 mA, I
B
= –50 mA)
V
CE(sat)
— — –0.7 Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
= –10 V, I
E
= 0, f = 1.0 MHz)
C
ob
— 11 — pF
Current–Gain — Bandwidth Product
(I
C
= –10 mA, V
CE
= –5.0 V, f = 100 MHz)
f
T
— 260 — MHz
Figure 1. Thermal Response
t, TIME (SECONDS)
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
θ
JC
(t) = (t) θ
JC
θ
JC
= 100 ° C/W MAX
θ
JA
(t) = r(t) θ
JA
θ
JA
= 375
° C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
θ
JC
(t)
t
1
t
2
P
(pk)
DUTY CYCLE, D = t
1
/t
2
SINGLE PULSE
–1000
–10
–100–1.0 –3.0 –10 –30
V
CE
, COLLECTOR–EMITTER VOLTAGE
Figure 2. Active Region — Safe Operating Area
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN
–100
1000
10
–1000–0.1 –10 –100
100
–1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms1.0 s
T
J
= 135 ° C
100 µ s
V
CE
= –1.0 V
T
A
= 25
° C
T
A
= 25 ° C
T
C
= 25 ° C
dc
dc
(APPLIES BELOW RATED V
CEO
)