Data Sheet

3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
I
B
, BASE CURRENT (mA)
Figure 4. Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
100
10
1.0
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients
+1.0
I
C
, COLLECTOR CURRENT
Figure 7. Capacitances
–0.1 –1.0–1.0 –10 –100 –1000
–2.0
–1.0
0
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS
)
V, VOLTAGE (VOLTS)
V
, TEMPERATURE COEFFICIENTS (mV/ C)
°θ
C, CAPACITANCE (pF)
–1.0
–0.8
–0.6
–0.4
–0.2
0
–0.01 –0.1 –10 –100–1.0
–1.0
–0.8
–0.6
–0.4
–0.2
0
–1.0 –10 –1000–100
–10 –100
T
J
= 25 ° C
I
C
= –10 mA
I
C
= –100 mA
I
C
= –300 mA
I
C
=
–500 mA
T
A
= 25 ° C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= –1.0 V
V
CE(sat)
@ I
C
/I
B
= 10
θ
VC
for V
CE(sat)
θ
VB
for V
BE
C
ob
C
ib