Data Sheet

ManualsBrandsConrad Components ManualsEducation & Development Kits10-Channel Light Effect Generator Kit

February, 2011 − Rev. 1

1 Publication Order Number:

BC637/D

BC637, BC639, BC639-16

High Current Transistors

NPN Silicon

Features

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector - Emitter Voltage

BC637

BC639

CEO

Vdc

Collector - Base Voltage

BC637

BC639

CBO

Vdc

Emitter - Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

1.0 Adc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T

= 25°C

Derate above 25°C

800

mW/°C

Operating and Storage Junction

Temperature Range

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

200 °C/W

Thermal Resistance, Junction−to−Case

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

COLLECTOR

BASE

EMITTER

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

TO−92

CASE 29

STYLE 14

x = 7 or 9

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAMS

BC63

9−16

AYWW G

63x

AYWW G

Summary of content (4 pages)

PAGE 1
BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Symbol BC637 BC639 BC637 BC639 Emitter - Base Voltage VCEO VCBO Value Vdc 60 80 1 EMITTER Vdc 60 80 VEBO 5.0 Vdc Collector Current − Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.
PAGE 2
BC637, BC639, BC639−16 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 60 80 − − − − 120 − − 60 80 − − − − 5.0 − − Vdc − − − − 100 10 nAdc mAdc 25 40 40 100 25 − − − − − − 160 160 250 − − − 0.5 − − 1.0 − 200 − − 7.
PAGE 3
BC637, BC639, BC639−16 500 1000 VCE = 2 V SOA = 1S 200 PD TA 25°C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 500 100 50 PD TC 25°C 20 10 5 1 BC635 BC637 BC639 PD TA 25°C PD TC 25°C 2 1 2 3 4 5 7 10 20 30 40 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 100 50 20 100 1 3 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 2. DC Current Gain 500 1 300 V, VOLTAGE (VOLTS) 0.8 VCE = 2 V 100 50 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V 0.6 0.4 0.
PAGE 4
BC637, BC639, BC639−16 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.