Datasheet

1 C2D10120D Rev. H
C2D10120D
Silicon Carbide Schottky Diode
Zero recovery
®
RectifieR
Features
• 1.2kVSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonV
F
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies 
• PowerFactorCorrection
• MotorDrives
Package
TO-247-3
Maximum Ratings (T
C
=25°Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
V
RRM
RepetitivePeakReverseVoltage 1200 V
V
RSM
SurgePeakReverseVoltage 1200 V
V
DC
DCBlockingVoltage 1200 V
I
F
ContinuousForwardCurrent(PerLeg/Device)
18/36
9/18
5/10
A
T
C
=25˚C
T
C
=135˚C
T
C
=157˚C
I
FRM
RepetitivePeakForwardSurgeCurrent 30
*
A T
C
=25˚C,t
P
=10ms,HalfSineWave
I
FSM
Non-RepetitivePeakForwardSurgeCurrent 100
*
A T
C
=25˚C,t
P
=10µs,Pulse
P
tot
PowerDissipation (PerLeg/Device)
138/276
60/120
W
T
C
=25˚C
T
C
=110˚C
T
J
,T
stg
OperatingJunctionandStorageTemperature
-55to
+175
˚C
TO-247MountingTorque
1
8.8
Nm
lbf-
in
M3Screw
6-32Screw
*
PerLeg,
**
PerDevice
Part Number Package Marking
C2D10120D TO-247-3 C2D10120
V
RRM
= 1200 V
I
F
(T
C
=135˚C) = 18 A
**
Q
c
  =56nC
**