Datasheet

1 C3D02060E Rev. D
C3D02060E
Silicon Carbide Schottky Diode
Z-Rec
™
RectifieR
Features
• 600-VoltSchottkyRectier
• OptimizedforPFCBoostDiodeApplication
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonV
F
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies 
• PowerFactorCorrection
 -TypicalPFCP
out
:300W-450W
Package
TO-252-2 
Part Number Package Marking
C3D02060E TO-252-2 C3D02060
PIN1
PIN2
CASE
Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
V
RRM
RepetitivePeakReverseVoltage 600 V
V
RSM
SurgePeakReverseVoltage 600 V
V
DC
DCBlockingVoltage 600 V
I
F
ContinuousForwardCurrent
8
4
2
A
T
C
=25˚C
T
C
=135˚C
T
C
=162˚C
I
FRM
RepetitivePeakForwardSurgeCurrent
12
9
A
T
C
=25˚C,t
P
=10mS,HalfSineWaveD=0.3
T
C
=110˚C,t
P
=10mS,HalfSineWaveD=0.3
I
FSM
Non-RepetitivePeakForwardSurgeCurrent
21
19
A
T
C
=25˚C,t
P
=10mS,HalfSineWaveD=0.3
T
C
=110˚C,t
P
=10mS,HalfSineWaveD=0.3
I
FSM
Non-RepetitivePeakForwardSurgeCurrent 65 A T
C
=25˚C,t
P
=10µS,Pulse
P
tot
PowerDissipation
39.5
17
W
T
C
=25˚C
T
C
=110˚C
T
J
,T
stg
OperatingJunctionandStorageTemperature
-55to
+175
˚C
TO-220MountingTorque
1
8.8
Nm
lbf-in
M3Screw
6-32Screw
V
RRM
= 600 V
I
F
(T
C
=135˚C) =4A
Q
c
 = 4.8nC