Datasheet

1 C3D20060D Rev. D
C3D20060D
Silicon Carbide Schottky Diode
Z-Rec
™
RectifieR
Features
• 600-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonV
F
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies 
• PowerFactorCorrection
 -TypicalPFCP
out
:2000W-4000W
• MotorDrives
 -TypicalPower:5HP-10HP
Package
TO-247-3
Maximum Ratings (T
C
=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
V
RRM
RepetitivePeakReverseVoltage 600 V
V
RSM
SurgePeakReverseVoltage 600 V
V
DC
DCBlockingVoltage 600 V
I
F
ContinuousForwardCurrent(PerLeg/Device)
29.5/59
14/28
10/20
A
T
C
=25˚C
T
C
=135˚C
T
C
=152˚C
I
FRM
RepetitivePeakForwardSurgeCurrent
(PerLeg/Device)
67/134
44/88
A
T
C
=25˚C,t
P
=10ms,HalfSineWave,D=0.3
T
C
=110˚C,t
P
=10ms,HalfSineWave,D=0.3
I
FSM
Non-RepetitivePeakForwardSurgeCurrent
(PerLeg/Device)
90/157
71/115
A
T
C
=25˚C,t
P
=10ms,HalfSineWave,D=0.3
T
C
=110˚C,t
P
=10ms,HalfSineWave,D=0.3
I
FSM
Non-RepetitivePeakForwardSurgeCurrent
(PerLeg/Device)
250/500 A T
C
=25˚C,t
P
=10µs,Pulse
P
tot
PowerDissipation(PerLeg)
136.3
59
W
T
C
=25˚C
T
C
=125˚C
T
J
,T
stg
OperatingJunctionandStorageTemperature
-55to
+175
˚C
TO-247MountingTorque
1
8.8
Nm
lbf-in
M3Screw
6-32Screw
Part Number Package Marking
C3D20060D TO-247-3 C3D20060
*
PerLeg,
**
PerDevice
V
RRM
= 600 V
I
F
(T
C
=135˚C) =28A**
Q
c
  = 50nC**