Datasheet

1 C4D10120D Rev. F
C4D10120D
Silicon Carbide Schottky Diode
Z-Rec
®
RectifieR
Features
• 1.2kVSchottkyRectier
• ZeroReverseRecoveryCurrent
• High-FrequencyOperation
• Temperature-IndependentSwitching
• ExtremelyFastSwitching
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies 
• PowerFactorCorrection
• MotorDrives
Package
TO-247-3
Maximum Ratings (T
C
=25°Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
V
RRM
RepetitivePeakReverseVoltage 1200 V
V
RSM
SurgePeakReverseVoltage 1300 V
V
R
DCPeakReverseVoltage 1200 V
I
F
ContinuousForwardCurrent
(PerLeg/Device)
19/38
9/18
5/10
A
T
C
=25˚C
T
C
=135˚C
T
C
=160˚C
I
FRM
RepetitivePeakForwardSurgeCurrent
26*
18*
A
T
C
=25˚C,t
P
=10ms,HalfSinePulse
T
C
=110˚C,t
P
=10ms,HalfSinePulse
I
FSM
Non-RepetitiveForwardSurgeCurrent
46*
36*
A
T
C
=25˚C,t
P
=10ms,HalfSinePulse
T
C
=110˚C,t
P
=10ms,HalfSinePulse
I
F,Max
Non-RepetitivePeakForwardCurrent
400*
320*
A
T
C
=25˚C,t
P
=10 ms,Pulse
T
C
=110˚C,t
P
=10 ms,Pulse
P
tot
PowerDissipation(PerLeg/Device)
93/187
40/81
W
T
C
=25˚C
T
C
=110˚C
T
J
OperatingJunctionRange
-55 to
+175
˚C
T
stg
StorageTemperatureRange
-55 to
+135
˚C
TO-247MountingTorque
1
8.8
Nm
lbf-in
M3Screw
6-32Screw
*PerLeg,**PerDevice
Part Number Package Marking
C4D10120D TO-247-3 C4D10120
V
RRM
= 1200 V
I
F
(T
C
=135˚C) =18A
**
Q
c
  = 54nC
**