User's Manual

Document Number: 002-15631 Rev.PRELIMINARY Page 17 of 38
PRELIMINARY
CYBLE-212006-01
CYBLE-202007-01
CYBLE-202013-11
Table 15. GPIO AC Specifications
XRES
Parameter Description Min Typ Max Units Details/Conditions
T
RISEF
Rise time in Fast-Strong mode 2 12 ns 3.3-V V
DDD
, C
LOAD
= 25 pF
T
FALLF
Fall time in Fast-Strong mode 2 12 ns 3.3-V V
DDD
, C
LOAD
= 25 pF
T
RISES
Rise time in Slow-Strong mode 10 60 ns 3.3-V V
DDD
, C
LOAD
= 25 pF
T
FALLS
Fall time in Slow-Strong mode 10 60 ns 3.3-V V
DDD
, C
LOAD
= 25 pF
F
GPIOUT1
GPIO Fout; 3.3 V V
DD
5.5 V
Fast-Strong mode
––33MHz
90/10%, 25 pF load, 60/40 duty
cycle
F
GPIOUT2
GPIO Fout; 1.7 VV
DD
3.3 V
Fast-Strong mode
16.7 MHz
90/10%, 25 pF load, 60/40 duty
cycle
F
GPIOUT3
GPIO Fout; 3.3 V V
DD
5.5 V
Slow-Strong mode
–– 7 MHz
90/10%, 25 pF load, 60/40 duty
cycle
F
GPIOUT4
GPIO Fout; 1.7 V V
DD
3.3 V
Slow-Strong mode
––3.5MHz
90/10%, 25 pF load, 60/40 duty
cycle
F
GPIOIN
GPIO input operating frequency
1.71 V V
DD
5.5 V
48 MHz 90/10% V
IO
Table 16. OVT GPIO DC Specifications (P5_0 and P5_1 Only)
Parameter Description Min Typ Max Units Details/Conditions
I
IL
Input leakage (absolute value).
V
IH
> V
DD
––10 μA 25°C, V
DD
= 0 V, V
IH
= 3.0 V
V
OL
Output voltage LOW level 0.4 V I
OL
= 20 mA, V
DD
> 2.9 V
Table 17. OVT GPIO AC Specifications (P5_0 and P5_1 Only)
Parameter Description Min Typ Max Units Details/Conditions
T
RISE_OVFS
Output rise time in Fast-Strong mode 1.5 12 ns 25-pF load, 10%–90%, V
DD
= 3.3 V
T
FALL_OVFS
Output fall time in Fast-Strong mode 1.5 12 ns 25-pF load, 10%–90%, V
DD
= 3.3 V
T
RISESS
Output rise time in Slow-Strong mode 10 60 ns
25 pF load, 10%-90%,
V
DD
= 3.3 V
T
FALLSS
Output fall time in Slow-Strong mode 10 60 ns
25 pF load, 10%-90%,
V
DD
= 3.3 V
F
GPIOUT1
GPIO F
OUT
; 3.3 V V
DD
5.5 V
Fast-Strong mode
––24MHz
90/10%, 25 pF load, 60/40 duty
cycle
F
GPIOUT2
GPIO F
OUT
; 1.71 V V
DD
3.3 V
Fast-Strong mode
––16MHz
90/10%, 25 pF load, 60/40 duty
cycle
Table 18. XRES DC Specifications
Parameter Description Min Typ Max Units Details/Conditions
V
IH
Input voltage HIGH threshold 0.7 × V
DDD
V CMOS input
V
IL
Input voltage LOW threshold 0.3 × V
DDD
V CMOS input
R
PULLUP
Pull-up resistor 3.5 5.6 8.5 kΩ
C
IN
Input capacitance 3 pF
V
HYSXRES
Input voltage hysteresis 100 mV
I
DIODE
Current through protection diode to
V
DD
/V
SS
100 μA–