Specifications
Table Of Contents
- CYBT-223058-02, CYBT-253059-02, EZ-BT Module
- General Description
- Benefits
- More Information
- Contents
- Overview
- Pad Connection Interface
- Recommended Host PCB Layout
- Module Connections
- Connections and Optional External Components
- Critical Components List
- Antenna Design
- Bluetooth Baseband Core
- Power Management Unit
- Integrated Radio Transceiver
- Microcontroller Unit
- Peripherals and Communication Interfaces
- Electrical Characteristics
- Chipset RF Specifications
- Timing and AC Characteristics
- Environmental Specifications
- Regulatory Information
- Packaging
- Ordering Information
- Acronyms
- Document Conventions
- Document History Page
- Sales, Solutions, and Legal Information
Document Number: 002-29172 Rev. ** Page 24 of 45
PRELIMINARY
CYBT-223058-02
CYBT-253059-02
Digital LDO
RF LDO
Table 16. Digital LDO
Parameter Conditions Min Typ Max Unit
Input Supply, DIGLDO_VDDIN Min must be met for correct operation V
OUT
+ 20 mV 1.26 1.4 V
Output Voltage, DIGLDO_VDDOUT
Range 0.9 1.2 1.275 V
Step – 25 – mV
Accuracy after trimming –2 – +2 %
Dropout Voltage At max load current – – 20 mV
Output Current DC Load 0.075 40 60 mA
Quiescent Current At T ≤ 85 °C, V
IN
= 1.4 V – – 40 µA
Output Load Capacitor, C
OUT
Total trace + cap ESR must be < 80 mٶ1.55
[4]
2.2 – µF
Line Regulation 1.235 V ≤ V
IN
≤ 1.4 V – 5 10 mV/V
Load Regulation V
OUT
= 1.2 V, V
IN
= 1.26 V, 1 mA ≤ I
OUT
≤ 25 mA – – 0.44 mV/mA
Load Step Error
I
OUT
step 1 mA ↔ 20 mA @ 1 µs rise/fall,
C
OUT
= 2.2 µF, V
IN
= 1.235 V, V
OUT
= 1.2 V
–24 – +24 mV
Leakage Current
Power down Mode, V
IN
= 1.4 V, Temp = 25 °C––50nA
Power down Mode, V
IN
= 1.4 V, Temp = 125 °C – –2µA
In-rush Current C
OUT
= 2.2 µF, V
IN
= 1.4 V, V
OUT
= 1.2 V – – 100 mA
LDO Turn On Time C
OUT
= 2.2 µF, V
IN
= 1.4 V, V
OUT
= 1.2 V, I
OUT
= 20 mA – – 120 µs
PSRR
C
OUT
= 2.2 µF, 1.235V ≤ V
IN
≤ 1.4 V, V
OUT
= 1.2 V,
I
OUT
= 20 mA
f = 1 kHz
f = 100 kHz
25
13
––dB
dB
Note
4. Minimum values represent minimums after derating due to tolerance, temperature, and voltage effects.
Table 17. RF LDO
Parameter Conditions Min Typ Max Unit
Input Supply, RFLDO_VDDIN Min must be met for correct operation V
OUT
+ 20 mV 1.26 1.4 V
Output Voltage, RFLDO_VDDOUT
Range 1.1 1.2 1.275 V
Step – 25 – mV
Accuracy –4 – +4 %
Dropout Voltage At max load current – – 20 mV
Output Current DC Load – 20 60 mA
Quiescent Current At T ≤ 85 °C, V
IN
= 1.4 V – – 50 µA
Output Load Capacitor, C
OUT
Total trace + cap ESR must be < 80 mٶ1.55
[4]
2.2 – µF
Line Regulation 1.235 V ≤ V
IN
≤ 1.4 V – – 10 mV/V
Load Regulation V
OUT
= 1.2 V, V
IN
= 1.26 V, 1 mA ≤ I
OUT
≤ 25 mA – – 1 mV/mA
Load Step Error
I
OUT
step 1 mA ↔ 20 mA @ 1 µs rise/fall,
C
OUT
= 2.2 µF, V
IN
= 1.235 V, V
OUT
= 1.2 V
–24 – +24 mV
Leakage Current
Power down Mode, V
IN
= 1.4 V, Temp = 25 °C––50nA
Power down Mode, V
IN
= 1.4 V, Temp = 125 °C––2µA
In-rush Current C
OUT
= 2.2 µF, V
IN
= 1.4 V, V
OUT
= 1.2 V – – 100 mA
LDO Turn On Time C
OUT
= 2.2 µF, V
IN
= 1.4 V, V
OUT
= 1.2 V, I
OUT
= 20 mA – – 120 µs